Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K

Chan, T.Y.; Lee, S.-W.; Gaw, Henry T.

doi:10.1109/55.62998

Cited by 24 publications

(9 citation statements)

References 15 publications

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“…Therefore, there is a higher amount of experimental data used in our method. Apart from that, the dependence of the electron mobility on the longitudinal electric field is obtained, which is not the case in [20] and [21].…”

mentioning

confidence: 78%

“…Some works have been reported where the procedure used has certain features in common with ours [20], [21]. However, there are significant differences between them.…”

mentioning

confidence: 86%

“…However, there are significant differences between them. In [20] and [21], the authors estimate the saturation velocity by calculating the extrapolation intercept of the versus plot, where is the intrinsic transconductance in the saturation region. Nevertheless, we compare the electron mobility at the drain edge of the channel MOSFET within an iterative procedure where many experimental output curves are taken into account.…”

mentioning

confidence: 99%

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A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

Roldán

Gamiz

López‐Villanueva

1997

IEEE Trans. Electron Devices

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Abstract-A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation, and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFET's and after having obtained the mobility dependence on both the transverse-and longitudinal-electric fields, we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method. A saturation-velocity value higher than other previously reported experimental ones was observed. This saturation-velocity value is similar to those calculated with Monte Carlo MOSFET simulators.

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mentioning

confidence: 78%

“…Some works have been reported where the procedure used has certain features in common with ours [20], [21]. However, there are significant differences between them.…”

mentioning

confidence: 86%

mentioning

confidence: 99%

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A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

Roldán

Gamiz

López‐Villanueva

1997

IEEE Trans. Electron Devices

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“…where T is in K. An empirical relation for the inversion electron saturation velocity is found in [128] as v sÀinv % 8:67 Â 10 6 À 2:68 Â 10 3 Â T cm=s ð7:64Þ…”

Section: Velocity Saturationmentioning

confidence: 99%

“…In comparison, selfheating leading to thermal runaway requires stressing at lower power density, of about 10 KW/cm 2 , and is said to limit the "thermal SOA" or electro-thermal SOA. [125][126][127] and in inversion [128] Failures caused by hot-electron injection and trapping require long-term reliability tests at low power density, of about 100 W/cm 2 , and are hence discussed in the reliability Chap. 11.…”

Section: Safe Operating Area (Soa)mentioning

confidence: 99%

High-Voltage and Power Transistors

El-Kareh¹,

Hutter²

2015

Silicon Analog Components

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This chapter focuses mainly on the drain-extended MOS transistor, DEMOS, for high voltage applications, and on the lateral double-diffused MOS transistor, LDMOS, for high power applications. In both cases, the drain is extended with a lightly-doped region, referred to as the drift region, to sustain the high voltage. The chapter begins with an analysis of the drift region and its optimization, typically by reduced surface-field (RESURF) techniques. The transistor switching performance is then analyzed, followed by a discussion of DEMOS and LDMOS design considerations and characteristics. High-voltage and high-current effects are then described, including quasi-saturation, body current, on-state breakdown, and safe operating area (SOA). The chapter concludes with selected high-voltage device applications. IntroductionThe MOSFETs discussed in Chap. 6 are designed for digital, analog, mixed-signal, and RF applications that operate in the low-to-medium voltage range of about 0.8-6 V. Many analog applications, however, require transistors that can handle voltages above 20 V and currents in the ampere range. Those transistors are referred to as high-voltage and power transistors. This chapter provides a comprehensive analysis of the drain-extended MOS transistor (DEMOS), for high-voltage and low-current applications, and the lateral double-diffused MOS (LDMOS) transistor, LDMOS, for power applications. (The "D" in LDMOS describes the sequential (double) diffusion of boron and arsenic through the same oxide opening, defining a precise channel length (Chap. 9). The "L" means that the current path is parallel to the silicon surface (lateral), as opposed to "V" in VDMOS where the current is nearly vertical to the silicon surface.) Schematic cross sections of both transistors (Table 7.1). The DEMOS is typically processed without added process complexity, whereas the LDMOS requires optimization of the P-body and N-drift regions to achieve high voltages and currents while minimizing the drain-to-source resistance and transistor area.The interest in bipolar, CMOS, and DMOS (BCD) technologies has been driven primarily by the proliferation of portable electronics, automotive electronics, and the need for energy efficiency. These applications cluster around different operating points, with 24 V for portable electronics; 60 V for automotive, solar, and LED backlighting; 85 V for power over Ethernet; 120 V for telecommunication; and 700 V for offline LED lighting, consumer, and industrial applications. As a result, BCD is now the technology of choice to realize power ICs by most integrated device manufacturers (IDM) and foundries [1][2][3][4][5].This chapter focuses mainly on transistors with voltage capabilities in the range of 20-700 V, where the bulk of the product applications lie.

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Cryogenic Operation of Silicon Power Devices

Singh¹,

Baliga²

1998

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Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K

Cited by 24 publications

References 15 publications

A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

High-Voltage and Power Transistors

Cryogenic Operation of Silicon Power Devices

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