Experimental demonstration of an all-optical routing node for multihop wavelength routed networks

Blumenthal, Daniel J.; Shell, M.; Gao, Qingzhu; Vaughn, M.D.; Wang, A.; Rigole, P.-J.; Nilsson, S.

doi:10.1109/ofc.1996.907685

Cited by 5 publications

(22 citation statements)

References 4 publications

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“…This intra-band free-carrier absorption, also known as the plasma effect, can be modeled as being directly proportional to the concentration of electrons and holes and to the square of the wavelength. The corresponding change in refractive index is given by (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16). This equation uses the fact that the concentrations of the heavy and light holes are proportional to their effective masses raised to the three-halves power [20].…”

Section: Free-carrier Absorptionmentioning

confidence: 99%

“…The absorption constant C depends on the material and can be estimated for In^xGaxASyPi.y materials lattice matched to InP (x « 0.47y) using (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18).…”

Section: Band Filling and Bandgap Shrinkagementioning

confidence: 99%

“…The absorption coefficient for a semiconductor with carrier injection is given by (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19).…”

Section: Band Filling and Bandgap Shrinkagementioning

confidence: 99%

“…The four transition energies used in (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) can be determined by momentum conservation and are given by (2-26). The conduction band and valence band energies are given relative to the respective band edges.…”

Section: Band Filling and Bandgap Shrinkagementioning

confidence: 99%

“…The segregation coefficients are determined by taking the ratio of the solid phase composition calculated from the x-ray and PL data to the gas phase concentration determined by the epison values for the source concentration and the effective flow rates from the growth program. The segregation coefficient for the group III components referred to as Keff is calculated from (4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)[l]. For group V components Kseg is calculated from (4-16)…”

Section: Kseg and Keffmentioning

confidence: 99%

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Improved Sampled Grating DBR Widely-Tunable 1.55 micrometer-Lasers

Mason¹,

Barton²,

Coldren³

2000

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Over the last three years, a number of improvements have been made in the design of SGDBR lasers with integrated componentry. Device design has improved the output power and tuning range due to an increase in the number of quantum wells in the active region from four to six. Devices with up to 8 mW of output power with integrated amplifiers and buried heterostructure devices with 72 nm tuning ranges were realized. Current laser results indicate that leakage current in buried heterostructure lasers is a major factor in limiting the device performance. To eliminate the parasitic leakage paths we have begun to investigate Fe doped blocking junctions for the device. Work on the wavelength monitor has focused on an external approach, which uses a wavelength dependent coupler in conjunction with a pair of photodetectors. Initial results show better than 1 nm sensitivity over a 30 nm range. The most recent work on the laser has focussed on integrating additional components for increased functionality. We have developed a curved waveguide semiconductor optical amplifier that can be integrated with the laser to increase the output power to greater than 6 mW.We have also investigated SGDBR lasers with integrated electro-absorption modulators. Using a 300 urn long bulk EA modulator we have demonstrated error free data transmission at 2.5 GBit/s with a 2 3I -1 pattern length at received powers of-32.5 dBm. Subject termsSemiconductor lasers, photonic integrated circuits, wavelength monitors, WDM devices, semiconductor optical amplifiers, electro-absorption modulators IntroductionThe goal of this program was to develop a widely tunable semiconductor laser diode with an integrated wavelength monitor. The widely tunable laser is a four section device with a pair of sampled grating distributed Bragg reflector mirrors as shown in figure 1. These devices use a Vernier effect tuning mechanism to provide widely tunable wavelength ranges. Because of the simple offset waveguide design, SGDBR lasers are easily integrated with other optoelectronic devices such as wavelength monitors, optical amplifiers, and modulators to form photonic integrated circuits. They employ periodically sampled grating mirrors which have multiple reflection peaks spaced approximately 5-7 nm apart. The duty cycle and sampling periods have been optimized for the desired wavelength coverage. A phase control section is included to enable alignment of the cavity mode with the mirror reflection peaks. Devices were fabricated using both ridge and buried ridge waveguide processes with passive regions formed by a combination of etching and MOCVD regrowth.This work is discussed in detail in Dr. T.G.B Mason's dissertation -which is included as Appendix I. Supplementary material outlining work on semiconductor optical amplifiers (SOAs) and Electro-absorption modulators (EAM) is also included in the report. Thesis summaryFirst we will briefly summarize the key results from Dr. Mason's dissertation. In appendix I, Dr. Mason discusses the design and development of ph...

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Section: Free-carrier Absorptionmentioning

confidence: 99%

Section: Band Filling and Bandgap Shrinkagementioning

confidence: 99%

“…The absorption coefficient for a semiconductor with carrier injection is given by (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19).…”

Section: Band Filling and Bandgap Shrinkagementioning

confidence: 99%

Section: Band Filling and Bandgap Shrinkagementioning

confidence: 99%

Section: Kseg and Keffmentioning

confidence: 99%

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Improved Sampled Grating DBR Widely-Tunable 1.55 micrometer-Lasers

Mason¹,

Barton²,

Coldren³

2000

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All Optical Multihop Architectures for Photonic Packet Switching

Blumenthal

1997

Photonic Networks

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Fiber-optic links supporting baseband data and subcarrier-multiplexed control channels and the impact of MMIC photonic/microwave interfaces

Blumenthal

Laskar

Gaudino

et al. 1997

IEEE Trans. Microwave Theory Techn.

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We report experimental and analytical results of a fiber-optic link that supports simultaneous transmission of baseband data and subcarrier multiplexed control-data channels. A novel transmitter design is used to optoelectronically combine baseband and subcarrier channels onto the optical carrier using a differential Mach-Zehnder (MZ) interferometer modulator. Microwave direct detection of the subcarrier data channel simplifies the receiver design and network architecture. An approach to optimize the transmitter parameters for a given transmitter/receiver configuration is presented. A discrete component link is implemented and its performance compared to analytical results and discrete-time simulations. Insertion of monolithic-microwave integrated-circuit (MMIC) technology is investigated by utilizing a MMIC mixer for control-channel upconversion and envelope detection in the link transmitter and receiver, respectively. High signal-to-noise ratio (SNR) of the control channel demonstrates that MMIC technology is a viable approach to integration of subcarrier multiplexed fiber links.

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Experimental demonstration of an all-optical routing node for multihop wavelength routed networks

Cited by 5 publications

References 4 publications

Improved Sampled Grating DBR Widely-Tunable 1.55 micrometer-Lasers

Improved Sampled Grating DBR Widely-Tunable 1.55 micrometer-Lasers

All Optical Multihop Architectures for Photonic Packet Switching

Fiber-optic links supporting baseband data and subcarrier-multiplexed control channels and the impact of MMIC photonic/microwave interfaces

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