Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz

Hafez, W.; Feng, Milton

doi:10.1063/1.1897831

Cited by 64 publications

(32 citation statements)

References 9 publications

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“…So far, devices with cutoff frequencies in excess of 400 GHz have been demonstrated [1,2]. To harness the full performance of the InGaAs/InP material system, the HBT cross section needs to be scaled to submicron dimensions, along with area scaling of parasitic capacitances, reduction of contact resistances, and vertical scaling of the epi structure.…”

Section: Introductionmentioning

confidence: 99%

InP double‐hetero bipolar transistor technology for 130 GHz clock speed

Weimann¹,

Houtsma²,

Yang³

et al. 2006

Phys. Status Solidi (c)

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PACS 84.40. Dc, 84.40.Lj, 85.30.Pq Indium Phosphide-based Hetero Bipolar Transistors (HBTs) have shown strong potential for mm-wave power electronics and mixed-mode applications beyond 100 GHz clock speed. We have developed a planar fabrication technology using all dry etched mesas, which scales to 0.25 µm emitter size. Devices show cut-off frequencies of f t = 380 GHz and f max = 380 GHz simultaneously (optimized for highest f max ) or f t = 410 GHz and f max = 340 GHz (optimized for f t ). As technology test vehicles, we have realized static-byfour divider circuits running at up to 130 GHz with a baseline epitaxial structure yielding f t = 330 GHz and f max = 300 GHz; Voltage-Controlled oscillators fabricated in the 380 GHz technology delivered power output of 0 dBm at 180 GHz. The possibility of reducing the extrinsic base-collector capacitance along with the device height by selective ion-implantation of the subcollector is explored.

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Section: Introductionmentioning

confidence: 99%

InP double‐hetero bipolar transistor technology for 130 GHz clock speed

Weimann¹,

Houtsma²,

Yang³

et al. 2006

Phys. Status Solidi (c)

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“…The speed of varying gate-voltages is also important. With recent advances in material science and nanotechnology, this timescale can be shorter than 10 −11 s, as is indicated by the recent invention of the 604 GHz transistor [29]. In our scheme, Vg1 and Vg2 are periodically varied in order to continuously generate entangled current; one period in our model is the sum of three timescales (three steps).…”

Section: < (T T 1 ) Can Easy Be Obtained Via the Dyson Equation And mentioning

confidence: 99%

Generation of electron entanglement in quantum dot systems

Sun

Zhen

et al. 2005

J. Phys.: Condens. Matter

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We propose a solid-state quantum structure capable of generating EinsteinPodolsky-Rosen (EPR) electron pairs using a parametric electron pumping idea and the Coulomb blockade phenomenon. The quantum structure consists of two coupled quantum dots and four leads. Our scheme is easy to implement, and it does not impose special requirements on the leads. By employing the parametric pumping idea, harmful processes can be avoided and only two quantum dots are needed. Furthermore, the EPR electron pairs are spatially separated.(Some figures in this article are in colour only in the electronic version) Quantum entanglement is a natural resource for quantum computation and quantum information [1]. The future development of quantum information and quantum computation depends largely on how effectively one can generate and process entangled states of different objects. So far, most experiments on quantum information processes, such as quantum cryptography [2] and quantum teleportation [3], have been done by using entangled EPR photon pairs. The entangled trapped ions and atoms also provide a means for the possible realization of quantum information and quantum computation [4,5]. However, it should be more interesting and important in terms of applications to generate electron spin entanglement in solid state systems [6][7][8][9][10][11][12][13][14]. The usefulness of electron spin entanglement has been assured by the recent demonstration of long electron spin lifetime in semiconductors [15,16]. Several methods [6][7][8][9][10][11]17] for entanglement generation as well as entanglement detection in solid state systems have been proposed. Beam splitters [6], devices based on BCS superconductors [12,13], and the two-dimensional interacting electron gas [14] are some examples. There are also proposals involving quantum dots (QDs) in generating entanglement

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“…Dividing the local charge change by the spatially independent current change allows a local signal velocity to be defined (5) Clearly, the local signal velocity and the regional signal delay are related (6) C. Relation Between and Propagation Velocity Fig. 2 attempts to portray the energetic environment experienced by an electron propagating between source and drain.…”

Section: B Definition Of Signal Velocitymentioning

confidence: 99%

“…In this work, we focus on simulations of small-signal, highfrequency performance, and we apply to FETs the regionaldelay approach that has long been used as a tool to guide the development of high-frequency bipolar transistors [5], [6]. The method helps identify fine structure in the contributions of the "intrinsic" and "extrinsic" parts of the transistor to the overall signal delay time, and hence to .…”

Section: Introductionmentioning

confidence: 99%

Regional Signal-Delay Analysis Applied to High-Frequency Carbon Nanotube FETs

Pulfrey

Castro

John

et al. 2007

IEEE Trans. Nanotechnology

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Abstract-A regional signal-delay analysis is presented for fieldeffect transistors intended for operation at very high frequencies. For the example used here of a doped-contact carbon nanotube field-effect transistor, the analysis reveals that tunneling into the channel region of the device, and modulation of the space-charge regions in the source and drain adjacent to the channel, are the principal contributors to the overall delay. A recently proposed lower limit to the signal delay time in the channel is critically examined via the introduction of a local signal velocity.Index Terms-Carbon nanotube, field-effect transistors, high frequency, signal delay.

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Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz

Cited by 64 publications

References 9 publications

InP double‐hetero bipolar transistor technology for 130 GHz clock speed

InP double‐hetero bipolar transistor technology for 130 GHz clock speed

Generation of electron entanglement in quantum dot systems

Regional Signal-Delay Analysis Applied to High-Frequency Carbon Nanotube FETs

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