Experimental determination of electronic stopping for ions in silicon dioxide

Abstract

Electronic stopping cross sections in silicon carbide for low-velocity ions with 1Z 1 15

Electronic stopping for protons andαparticles from first-principles electron dynamics: The case of silicon carbide

“…shows our RT-TDDFT simulation result in comparison with experimental measurements for α-particles. For α-particles, Zhang et al used a TOF setup to determine electronic stopping power of He ions in SiC over a wide velocity range [53,54]. There is excellent agreement between our result and the experiments for the velocity range below the stopping power maximum.…”

“…The dashed black curve represents a dielectric formalism [48] calculation with an empirically fitted dielectric function. Red circles and blue squares show experimental data for α-particles over two velocity ranges [53,54]. The solid green curve corresponds to the values we obtained by calculating the non-equilibrium response using RT-TDDFT.…”

Response of strontium titanate to ion and electron irradiation

“…Since the SRIM predicted electronic stopping power for He in SrTiO 3 is used to convert energy differences, accurate electronic stopping power values are essential to the reliable determination of both damage profile and Au distribution from the RBS measurements. Good He stopping predictions from the SRIM code have been validated experimentally in Si [33], Au [34], SiC [35,36] and a few oxides [37][38][39], which provide some confidence of using the SRIM predicted He stopping in SrTiO 3 .…”

New developments in stopping power for fast ions

“…So far, Zhang et al [14] have measured the stopping power for 86 different ion-target combinations, every one for a large energy range, with an average deviation of (À1 ± 5)% from SRIM. An example [15] is shown in Fig. 4.…”

“…4. The stopping power of silicon dioxide for Li ions, measured by Zhang et al [15], compared to SRIM [5], PASS [1] and Heredia-Avalos et al [8].…”