Experimental determination of the constants of absolute volume deformation potentials at band edges in semiconductors

Daunov, M. I.; Kamilov, I. K.; Gabibov, S. F.

doi:10.1134/1.1809413

Cited by 8 publications

(9 citation statements)

References 15 publications

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“…These data correlate qualitatively with the results [3,4], where the shift of the deep levels with pressure has been studied. It has been demonstrated in the latter works that the levels marked as 2 and 3 in Table 1 are shifted with pressure, together with the c-band bottom, though the binding energies presented in [4] differ from those of [2]. This corresponds to so-called l-c-centres, with Г 6 symmetry of the c-band bottom [5,6].…”

Section: Introductionsupporting

confidence: 87%

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On the problem of type of deep recombination centres in InSb

Boiko¹,

Shepelskii²,

Stariy³

et al. 2010

Ukr. J. Phys. Opt.

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Deep levels of structural defects in InSb, which are the main centres of recombination in this material, have been studied experimentally for a long time. However, neither clear understanding of the nature of these levels nor relevant information about their binding energy has been achieved until now, while the experimental data of different works are contradictory. In this paper a theoretical model of recombination processes in InSb is built that takes into account the Auger recombination, band-to-band radiative recombination, and the recombination via deep defect levels, the intensities of which depend in different ways on the uniaxial stresses applied. A comparison of experimental stress dependences of the photoconductivity in both n-InSb and p-InSb with the predictions of our theory allows identifying the deep recombination level with an h-centre of acceptor type, with the symmetry Г 8 of the v-band top, which shifts together with the v-band edge under the uniaxial compression.

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Section: Introductionsupporting

confidence: 87%

“…Moreover, they should split into two levels. Notice that these results obviously contradict the experimental data [3,4]. Therefore additional studies of the deep levels in InSb would be timely.…”

Section: Introductionmentioning

confidence: 79%

On the problem of type of deep recombination centres in InSb

Boiko¹,

Shepelskii²,

Stariy³

et al. 2010

Ukr. J. Phys. Opt.

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“…Calculations have been done taking into account the statement about fixed level of deep impurity energy, measured from electron affinity level [4][5][6][7] when hydrostatic pressure is changed and with the use of next expressions [15]:…”

Section: Resultsmentioning

confidence: 99%

“…Under hydrostatic pressure the shallow impurity centers shift together with their conduction band. In contrast, the energy of deep impurity centers are kept constant relative to absolute vacuum at isotropic compression of crystal lattice [4][5][6][7]. This invariance is due to the fact that wave functions of localized states should be built over whole Brillouin zone, and influence of the hydrostatic pressure on energy of states is defined by evolution of total energy spectrum, and not by first or second nearest bands only [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Deep Donor Levels in Semiconductors with Vacancies in the Anion Sublattice

2020

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The impurity electron spectrum for undoped bulk crystals of n-type arsenides GaAs, InAs, CdSnAs2, CdGeAs2, and CdTe, ZnO has been studied by quantitative analysis of baric and temperature dependences of kinetic coefficients. The vacancies in the anion sublattice in these semiconductors have been found to be corresponding to deep donor centers for following reasons. Shallow intrinsic centers at hydrostatic pressure are dependent on their own band. In contrast, the energy of deep impurity centers at isotropic compression of crystal lattice is constant relative to absolute vacuum. The energy level locations relative to the conduction band edge and the pressure coefficients for energy spans between them and corresponding bottoms of conduction bands have been determined. Energy levels of deep donor centers shift into the depth of conduction band with a decrease of the band gap.

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Ultrafast Photoacoustic Nanometrology of InAs Nanowires Mechanical Properties

et al. 2022

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InAs nanowires are emerging as go-to materials in a variety of applications ranging from optoelectronics to nanoelectronics, yet a consensus on their mechanical properties is still lacking. The mechanical properties of wurtzite InAs nanowires are here investigated via a multitechnique approach, exploiting electron microscopies, ultrafast photoacoustics, and finite element simulations. A benchmarked elastic matrix is provided and a Young modulus of 97 GPa is obtained, thus clarifying the debated issue of InAs NW elastic properties. The validity of the analytical approaches and approximations commonly adopted to retrieve the elastic properties from ultrafast spectroscopies is discussed. The mechanism triggering the oscillations is unveiled. Nanowire oscillations in this system arise from a sudden expansion of the supporting substrate rather than the nanowire itself. This mechanism constitutes a new paradigm, being at variance with respect to the excitation mechanisms so far identified in ultrafast experiments on nanowires and on a plethora of nanosystems. The present findings are relevant in view of applications involving InAs nanowires, knowledge of their mechanical properties being crucial for any device engineering beyond a trial-and-error approach. The results bear generality beyond the specific case, the launching mechanism potentially encompassing a variety of systems serving as nano-optomechanical resonators.

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Experimental determination of the constants of absolute volume deformation potentials at band edges in semiconductors

Cited by 8 publications

References 15 publications

On the problem of type of deep recombination centres in InSb

On the problem of type of deep recombination centres in InSb

Deep Donor Levels in Semiconductors with Vacancies in the Anion Sublattice

Ultrafast Photoacoustic Nanometrology of InAs Nanowires Mechanical Properties

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