Pressure dependences of the Hall coefficient and resistivity of Ge with doubly charged Au 2− impurity have been studied for the first time under hydrostatic pressures of up to 7 GPa at 295 K on both sides of the intervalley transition L 1 ↔ 1 occurring at P = 2.8 GPa. The energy gap between the top of the valence band and the energy level E 2− Au is independent of the hydrostatic pressure. The density-of-states electron effective mass in the (100) minimum of the conduction band of Ge m d = 6 2/3 (m m 2 ⊥ ) 1/3 = 1.05m 0 . Ge Au 2− can be used for monitoring the hydrostatics of pressures of up to 10 GPa.

No abstract

No abstract

The Hall coefficient R and specific resistance ρ have been measured in p-InSb : C r, with a hole concentration of about 10 12 cm -3 at T = 77 K, as a function of pressure up to P = 1.5 GPa at T = 77 and 300 K. The deep acceptor level is found to be located at the distance ε A2 = 0.11 eV from the top of the valence band. The pressure coefficient of the valence band maximum ∂ε V /∂P was determined relative to the vacuum in semiconductors Ge, InSb, InAs, and GaAs.

No abstract