Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation

Abstract

The low-field electron mobility in bulk ZnO has been the object of extensive experimental studies, mainly through measurement of the temperaturedependent Hall effect. In this work, we reassess the experimental results through direct simulations of Hall measurements, performed with a Monte Carlo transport model and taking into account all the major scattering mechanisms. The deformation potentials required to compute acoustic and optical phonon scattering are derived from first-principles computations, and an original theory for charged-dislocation-line scattering is proposed and implemented. Monte Carlo results for the electron mobility and the Hall factor are compared with analytical expressions derived with the relaxation-time approximation, which is found to be adequate at low temperatures where inelastic scattering effects due to optical phonons are negligible.

Electric field dependence of the electron mobility in bulk wurtzite ZnO

“…Below 50 K, the mobility data are assumed to be determined by both band and hopping conduction (Look et al 1998). The experimental data of low-field mobility on bulk wurtzite ZnO at carrier concentration 6 × 10 16 cm −3 shows that the critical temperature between the two types of conduction is about 40 K, which may be considered in a good agreement with our calculations (Bertazzi et al 2009).…”

Simultaneous Electrical and Thermoelectric Parameter Retrieval via Two Terminal Current–Voltage Measurements on Individual ZnO Nanowires

“…The ZnO NWs used in this work are single crystal and have good lattice quality with smooth surfaces (see Figure 1a, a typical high‐resolution TEM image, and Figure 1b, a typical PL spectrum from a ZnO NW), indicating the surface roughness scattering cannot limit the mobility. At high temperature, the electron–phonon scattering therefore dominants scattering processes,18, 19 and the total mobility μ is limited mainly by lattice vibration.…”

THE LEVEL OF SELF-COMPENSATION OF ZnO CODOPED BY NITROGEN AND ALUMINUM

“…Співлеговані азотом та алюмінієм плівки оксиду цинку були о саджені методом високочастотного (ВЧ) магнетронного розпилення на р-Si підкладки (ρ п = 9 Ом•кв) з використанням методу багатостадійного (пошарового) росту [13] Вольт-амперні характеристики (ВАХ) до-сліджували за стандартною методикою із за-стосуванням цифрового вольтметра і мікро-амперметра. Для температурних досліджень зразки установлювали у термостат, оснащений термоелектричним охолоджувачем, що забез-печувало виміри в діапазоні 260-360 К.…”