Experimental EMI study of a 3-phase 100kW 1200V Dual Active Bridge Converter using SiC MOSFETs

Abstract

This paper presents a system-level EMI investigation in a new 3-phase 1.2kV 100kW insulated DC/DC converter. In this prototype, achieving full operation was prevented by false triggering of semiconductors due to large common-mode current through gate drivers. A passive filter embedded into the structure of the transformer to connect it to the ground is proposed as a corrective and cost effective solution to mitigate the electromagnetic interferences. New grounding layout enabled to reduce the common-mode current through gate drivers by up to 75% without decreasing the switching rate. This allowed to proceed to measurements on the prototype at nominal operation. The method is validated in simulation and extensive experimental results have been obtained from the considered prototype. This proved the feasibility of the proposed solution and showed the effect of the transformer design in EMI behavior of insulated DC/DC converters.

Equivalent Circuit Model of a Pulse Planar Transformer and Endurance to Abrupt dv/dt

“…Wide bandgap (WBG) semiconductors such as SiC MOS-FETs allow higher frequency switching power electronics for better efficiency [5]. Nevertheless, as switching frequency increases, WBG poses new EMI issues such as switching oscillations [6], [7], [8]. Given the close proximity between gate drivers and power component, this EMI sources create common currents though the gate driver as illustrated in Fig.…”