Experimental evaluation of trapping efficiency in silicon nitride based charge trapping memories

Suhane, A.; Arreghini, A.; bosch, G. Van den; Breuil, L.; Cacciato, A.; Rothschild, A.; Jurczak, M.; Houdt, J. Van; Meyer, K. De

doi:10.1109/essderc.2009.5331460

Cited by 10 publications

(5 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, devices with SiN that was 4nm-thick showed poor program characteristics and could not be matched. This is because a 4nm-thick SiN layer is so thin that it has a small charge trap site [13,14], which can also cause the large variation in the amount of ΔV FB . When SiN is both 6nm and 8 nm, the devices with the extended trapping layer show a larger memory window than the reference device and ΔV FB increases with the extension length.…”

Section: Methodsmentioning

confidence: 99%

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Kim¹,

Yang²,

Kim³

et al. 2015

Transactions on Electrical and Electronic Materials

View full text Add to dashboard Cite

This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) siliconoxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.

show abstract

Section: Methodsmentioning

confidence: 99%

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Kim¹,

Yang²,

Kim³

et al. 2015

Transactions on Electrical and Electronic Materials

View full text Add to dashboard Cite

show abstract

“…4a and 4b). Worse program performance could be attributed to a lower band offset with respect to Al 2 O 3 , which deteriorate the trapping efficiency [8]. On the contrary, the erase performance is much improved compared to the TANOS reference (≈ 2 V difference for the same erase conditions) for all of the stacks in which the original 4 nm tunnel oxide is mixed with the 2 nm Si 3 N 4 buffer layer, i.e.…”

Section: Resultsmentioning

confidence: 97%

Investigation of rare-earth aluminates as alternative trapping materials in Flash memories

Cacciato

Suhane

Richard

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

Self Cite

View full text Add to dashboard Cite

The integration of La, Gd, and Lu aluminates in a Charge-Trapping Flash (CTF) memory flow as alternative trapping materials is evaluated. It is found that, in order to control the mixing of the aluminates with the tunnel oxide, nitride (for Gd) or nitride + oxide (for La and Lu) buffer layers have to be used. It is also found that during the post-deposition annealing treatments, the nitride buffer layer mixes with the tunnel oxide. This results in very good erase and endurance performance, which is attributed to enhanced hole tunneling from the Si substrate.

show abstract

“…The trapped charge centroid location was estimated from the transient analysis method [40][41][42][43], which transforms the V FB versus t p E/W or W/E transitions to a J TRANS versus E TO relationship. J TRANS is the transient current which develops during the W/E or the E/W transition and it is given by:…”

Section: Transient Analysis Methodsmentioning

confidence: 99%

Inert ambient annealing effect on MANOS capacitor memory characteristics

et al. 2015

View full text Add to dashboard Cite

In this work we report on the influence of nitrogen ambient thermal effects on the performance of Pt/Al2O3/Si3N4/SiO2/Si memory capacitors. Two post deposition annealing (PDA) furnace steps were employed, at 850 and 1050 °C both for 15 min. The alumina films were deposited by atomic layer deposition using TMA/H2O at 250 °C. The structural characteristics of the stacks were evaluated by transmission electron microscopy and x-ray reflectivity measurements. The memory performance of the stacks was evaluated by write/erase and erase/write measurements, endurance and retention testing. It was found that in as-deposited state the Al2O3 layer is defective resulting in strong leakage currents, controlled by deep defects states. Thus, this behavior inhibits the memory functionality of the stacks. PDA crystallizes and condenses the Al2O3 transforming the layer from amorphous to polycrystalline. During this transformation the Al2O3 electrical quality improves greatly indicating that a significant number of these deep defects have been removed during annealing. Physical reasoning implies that the most plausible origin of these deep defects is hydrogen. However, the polycrystalline Al2O3 films showed inferior retention characteristics which are attributed to grain boundary related shallow defects. The findings of this work could pave the way for more efficient annealing schemes, in which an important factor is the time interval for hydrogen out-diffusion from the Al2O3 layer.

show abstract

Experimental evaluation of trapping efficiency in silicon nitride based charge trapping memories

Cited by 10 publications

References 3 publications

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Investigation of rare-earth aluminates as alternative trapping materials in Flash memories

Inert ambient annealing effect on MANOS capacitor memory characteristics

Contact Info

Product

Resources

About