Experimental evidence for the transition from two- to three-dimensional behavior of excitons in quantum-well structures

Well-width dependence of exciton-phonon scattering inInxGa1−xABorri1, Langbein2, Hvam3 et al. 1999Phys. Rev. B

“…In thin In x Ga 1Ϫx As QW's, the excitonic wave function penetrates significantly into the GaAs barrier ͑mainly due to the electron wave function͒, leading to a decrease of exciton binding energies and inhomogeneous linewidths, with decreasing well width. 25 Photoluminescence and photoluminescenceexcitation measurements 10,12 on the samples investigated here show exciton linewidths and binding energies strongly decreasing for well thicknesses below 3 nm.…”

Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidths

“…The well width of the maximum depends on the material parameters of the active layer and barriers. 10 For the previously studied reference sample with an emission energy of 1.465 eV, i.e., about 50 meV below the GaAs exciton emission, 6 the wave functions of the carriers are strongly localized in the active layer. For the samples studied here with an emission energy of about 1.505 eV, the excitonic transition occurs only 10 meV below the GaAs exciton luminescence.…”

“…It is well known that the luminescence linewidth of the emission of the quantum well depends on the well width. 10,11 For a thick quantum well with a deep potential, the wave function is mainly located in the active layer. The linewidth of the photoluminescence is broadened by fluctuations of the interface, if they occur on a length scale comparable with the exciton Bohr radius.…”

Above-barrier states inInxGa1−xAs/Worren1, Ozanyan2, Hunderi3 et al. 1998Phys. Rev. B10050View full textAdd to dashboardCite

“…This agrees well with what others have found through experiment or calculations. 27,28 We assume that these ͑confined state͒ exciton binding energies are correct also for the other samples with xӍx nom and approximately the same well width.…”