Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidths

Wang, K. H.

doi:10.1116/1.589737

Cited by 13 publications

(5 citation statements)

References 11 publications

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“…The same behaviour is also observed for sample 1641, even though no PL signal could be detected at excitation power lower than 0.98 mW. This is consistent with reports from other groups demonstrating that the random selforganized process usually results in a bimodal distribution of dots [18,19]. Broadening of peak-2 for sample 1641 could be due to increased size distribution of small dots from the stacked structure as compared to the control sample.…”

Section: Photoluminescencesupporting

confidence: 90%

Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

Bangert

Missous

2006

Semicond. Sci. Technol.

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A detailed study of defect formation, as a result of large dots synthesis, in stacked InAs/GaAs quantum dots (QDs) was performed using double crystal x-ray diffraction, transmission electron microscopy, atomic force microscopy and photoluminescence. Three stacked samples with varying InAs nominal thicknesses but fixed GaAs 'spacer' of 25 nm were grown by molecular beam epitaxy (MBE). For these large dots emitting near 1.3 µm, the formation of coherent QDs was accompanied by 'volcano-like' defects and extended defects such as threading dislocations. Power dependence photoluminescence revealed a bimodal distribution of small dots coexisting with the large dots. Surface depressions due to lattice bending within the sample were also observed. The 'volcano-like' defects which extended all the way to the surface had a surface density of the order of 10 9 cm −2 . Remarkably, significant improvements in photoluminescence intensity were observed when the material was etched to selectively remove the topmost stacks thus demonstrating that the 'volcano-like' defects were responsible for the severely suppressed photoluminescence efficiencies. For nominal InAs thickness of 2.73 monolayers, an optimal stack of three periods yielded the highest photoluminescence intensity before the onset of defects.

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Section: Photoluminescencesupporting

confidence: 90%

Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

Bangert

Missous

2006

Semicond. Sci. Technol.

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“…The luminescence of the QD array with a 120 nm diameter shows a shift to higher energy. The PL energy shift relative to the QW emission energy is about 5 meV [9], consistent with theoretical calculations of the lateral quantization of the electron energy (using 5 eV for the vacuum level). The small observed broadening in the QD array peak can be attributed to the fluctuations in the QD size (lateral imperfections due to wet chemical etching).…”

Section: Sample Preparationsupporting

confidence: 66%

Electron Beam Lithography-Based InGaAs/GaAs Quantum Dot Arrays on (311)A GaAs Surfaces

Rodrigues¹,

Alves²,

González‐Borrero

et al. 2002

phys. stat. sol. (b)

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The development of techniques of nanofabrication is presented, using electron beam lithography, applied to semiconductor heterostructures grown by molecular beam epitaxy on non-(100) substrates. The structures studied were fabricated on InGaAs/GaAs single quantum wells, with 15% In concentration and a well width of 4 nm. The arrays of quantum dots were studied by photoluminescence spectroscopy. The optical emission spectra were analyzed with regard to the dot parameters, power density and temperature.Introduction Nanodevices, such as single-electron transistors or quantum wire lasers, require precise lithography with dimensions of the order of 10 nm. Electron beam lithography (EBL) is the method most used to fabricate devices with dimensions of less than 100 nm.Owing to the interest in the dimensionality dependence of a wide variety of physical phenomena, as well as their potential for device applications, low-dimension semiconductor structures have been investigated intensively in the last few years. The effect of lateral quantization in these small structures, whose sizes are comparable to the wavelength of the carriers, results in an increase of the exciton binding energy, density of states and other important physical parameters.The interest in the use of non-(100) surfaces as substrates for epitaxial growth of semiconductor heterostructures such as quantum wells (QWs), superlattices, quantum dots (QDs) [1-6] and devices has significantly increased over the last few years because these structures reveal new and superior properties. The possibility of changing and improving fundamental material properties, growth mechanisms, surface kinetics and impurity incorporation and obtaining new interfaces by growing on crystal orientations other than (100) has led to much research on these physical aspects. The developments in quantum structures have brought out naturally the importance of all surfaces that bound nanodevices. The use of GaAs-based heterostructures grown on non-(100) surfaces has not been conventional due to the natural corrugation of these surfaces. This property can limit the spatial resolution and the quality of the interfaces. To our knowledge no work related to the use of non-conventional GaAs surfaces for nanofabrication using EBL and wet chemical etching has been reported in the literature.

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“…[1][2][3][4][5] Microcolumn arrays of electron beam sources for high throughput e-beam lithography are being developed. 6 These microcolumns, due to their small size, cannot be operated above a few thousand volts.…”

Section: Introductionmentioning

confidence: 99%

Charge induced pattern distortion in low energy electron beam lithography

Satyalakshmi¹,

Olkhovets²,

Metzler³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffect of incident current and energy on surface charging and electron emission of hydrogenated diamond films induced by low energy electron irradiation Charge induced pattern distortions in low voltage electron beam lithography in the energy range of 1 to 5 kV were investigated. Pattern distortion on conducting substrates such as silicon was found to be small, while significant pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates caused by charge trapping and deflection of the incident electron beam. The nature and magnitude of pattern distortions were found to be influenced by the incident electron energy, pattern size, electrical conductivity, and secondary electron emission coefficient of the substrate. Theoretical modeling predicts the electron beam deflection to be directly proportional to the trapped surface charge density and inversely proportional to the accelerating voltage.

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Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidths

Cited by 13 publications

References 11 publications

Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

Electron Beam Lithography-Based InGaAs/GaAs Quantum Dot Arrays on (311)A GaAs Surfaces

Charge induced pattern distortion in low energy electron beam lithography

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