Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

doi:10.1038/srep44223

Cited by 14 publications

(9 citation statements)

References 35 publications

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“…4a ). The resistivity at 300 K is about 8.0 Ω cm, which is relatively lower compared to some recent results 30 , 31 . The E a can be estimated by based on the temperature-dependent resistivity, where ρ , T , ΔE , k B , and ρ 0 are the resistivity, temperature, E a , Boltzmann constant, and fitting coefficient, respectively 32 .…”

Section: Resultscontrasting

confidence: 63%

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Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

et al. 2021

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Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density, excellent chemical and thermal stability. However, their application has been severely hindered by the low p-doping efficiency, which is ascribed to the ultrahigh acceptor activation energy originated from the low valance band maximum. Here, a valance band modulation mode is proposed and a quantum engineering doping method is conducted to achieve high-efficient p-type ultra-wide band-gap nitrides, in which GaN quantum-dots are buried in nitride matrix to produce a new band edge and thus to tune the dopant activation energy. By non-equilibrium doping techniques, quantum engineering doped AlGaN:Mg with Al content of 60% is successfully fabricated. The Mg activation energy has been reduced to about 21 meV, and the hole concentration reaches higher than 1018 cm−3 at room temperature. Also, similar activation energies are obtained in AlGaN with other Al contents such as 50% and 70%, indicating the universality of the quantum engineering doping method. Moreover, deep-ultraviolet light-emission diodes are fabricated and the improved performance further demonstrates the validity and merit of the method. With the quantum material growth techniques developing, this method would be prevalently available and tremendously stimulate the promotion of ultra-wide band-gap semiconductor-based devices.

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Section: Resultscontrasting

confidence: 63%

“…The insets are the plots of reciprocal temperature (1000/ T ) verse log-scale resistivity and hole concentration. c Al-content-dependent E a of Mg-doped disordered AlGaN alloys 16 , 28 – 30 , 32 , 34 – 40 and the E a of quantum engineering doped AlGaN in this work …”

Section: Resultsmentioning

confidence: 72%

Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

et al. 2021

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“…The SL doping method uses energy band engineering to reduce the AE of Mg acceptor impurities 143 – 149 . In the III-nitride heterostructure, the polarization effect caused by lattice mismatch will generate a polarized electric field, which will cause the energy band near the interface to bend, thereby reducing the acceptor impurities near the interface.…”

Section: Epitaxial Growth and Doping Of Alganmentioning

confidence: 99%

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

et al. 2021

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Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.

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“…In simulations, Mg delta-doping of an AlN/GaN superlattice led to a lower acceptor activation energy and increased the hole concentration. 3 , 4 Another method to surmount this difficulty is to grow p-type GaN (p-GaN) on p-AlGaN directly and then grow less than 5 nm heavily doped p-GaN (p ++ -GaN) at the very end of the p-GaN layer to reduce the contact resistance between the metal contact and the p-type layer. This p ++ -GaN/p-GaN/p-AlGaN sandwich structure is widely utilized in ultraviolet-based light-emitting diodes (LEDs) and laser diodes (LDs).…”

Section: Introductionmentioning

confidence: 99%

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Liang

Firdaus

Kang

et al. 2022

ACS Appl. Mater. Interfaces

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Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 10 18 cm –3 . The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at −1 V, and an external quantum efficiency of 5.14 × 10 2 % under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.

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Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

Cited by 14 publications

References 35 publications

Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

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