Experimental investigation of structures of interior interfaces in GaAs

Bernatz, Georg; Nau, Siegfried; Rettig, R.; Jänsch, H.J.; Stolz, W.

doi:10.1063/1.371752

Cited by 18 publications

(12 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The technique was applied recently to the (GaIn)As/InP, 15 (GaIn)P/GaAs, 16 and AlAs/GaAs 17 material systems. Our technique, based on highly selective wet chemical etching followed by AFM imaging, achieves lateral resolution of 5-10 nm and monolayer vertical resolution over fields of view as large as several microns.…”

Section: Introductionmentioning

confidence: 99%

Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

Bernatz

Nau

Rettig

et al. 2000

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

Bernatz

Nau

Rettig

et al. 2000

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

“…However, the graphene patch is so small (,10 nm in our case) that it is likely to completely lie within one homogeneous domain of the quantum well walls, which is approximately 10-30 nm. [40][41][42] Consequently, the polarization relaxation rate is expected to be C 12 5h 2 /t 12 , where t 12 is the lifetime for the intersubband transition 2w? 1w j j , whose typical value for the quantum well cascade systems is 43,44 t 12 5h 2 /C 12 <1 ps, corresponding to C 12 <0.66 meV.…”

Section: Resultsmentioning

confidence: 99%

Proposed graphene nanospaser

Apalkov

Stockman

2014

Light Sci Appl

View full text Add to dashboard Cite

We propose a novel nanospaser that operates in the mid-infrared region and utilizes a nanopatch of graphene as its plasmonic core and a quantum-well cascade as its gain medium. This design takes advantage of the low optical losses in graphene resulting from its high electron mobility. The proposed quantum cascade graphene spaser generates optical fields with unprecedentedly high nanolocalization, which is characteristic of graphene plasmons. This spaser will be an efficient nanosource of intense and coherent hot-spot fields in the mid-infrared spectral region with potential widespread applications in mid-infrared nanoscopy, nanospectroscopy, nanolithography, and optoelectronic information processing.

show abstract

“…Moreover, selective etching studies on the nanostructures like the ones shown in Ref. 37 are likely to give important insights in the formation mechanism.…”

mentioning

confidence: 94%

Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop”

Mura

Gocalinska

Juška

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications.In the past few decades low-dimensional self-assembled quantum dots (QDs), as well as other zero/one dimensional nanostructures, have played an important role in studies of fundamental and applied physics 1 , being attractive, for example, for optoelectronic applications 2, 3 , as well for quantum information and computing 4,5,6 . The possibility to transition/transform from one nanostructure into another is a topic of particular interest, e.g. a dotlike shape can be made into a ring-like one, i.e. into quantum rings (QRs). 7,8,9,10,11,12,13,14,15,16 Considering AlInAs-InP structures, conventionally exploited in telecom applications, they show a peculiar type II band alignment, making them suitable for conventional opto-microelectronics 17 , while can also be an attractive option for "exotic" innovative applications with engineered band alignment. Some of us have shown unforeseen evidence 18 that the presence of Al0.48In0.52As, together with specific surface organization (and possible phase separation), has profound effects on the nucleation of InP (mono)layers. Indeed, InP deposited directly on lattice-matched AlInAs forms a variety of nanostructures, despite the nominally strain free environment. These structures, if capped, would generally result in a relatively broad type II emission around one micron, while preliminary transmission microscopy images show that the nanostructures evolve during capping, and are partially preserved after overgrowth. 19In this Letter, we report on the possibility of transforming these InP nanostructures grown by metalorganic vapour phase epitaxy (MOVPE) on lattice-matched InP substrates into variously shaped InP(As) emitters in the telecom windows. For example, InP(As) dots-to-rings transformation is carried out by intentional exposition to selected hydrides. Moreover, we observe a large phenomenology of a) Author to whom correspondence should be addressed. Electronic mail: enrica.mura@tyndall.ie 2 morphologies induced by growth conditions choice and post-growth layer exposure to hydrides that we critically discuss. Indeed the combination of arsenisation and cooldown protocols affects the final nanostructures' shape, changing the original dots into rings or domes (and others), conveying a rich variety of nanostructures in a controlled manner, and importantly engineering the photoluminescence characteristics, with specific configurations delivering clear signatu...

show abstract

Experimental investigation of structures of interior interfaces in GaAs

Cited by 18 publications

References 14 publications

Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

Proposed graphene nanospaser

Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop”

Contact Info

Product

Resources

About