Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices

“…However, another possible explanation is that the InAsSb surface undergoes restructuring while cooling down after OMVPE growth. Such observations have been reported for InP and GaAs [20,21]. In those [16], and the triangles are from Ref.…”

“…Capping layers were precisely removed by selective chemical etching to expose the underlying layer, and then AFM was used to examine this interior surface. Interior surfaces of GaAs grown without interruption were nearly vicinal, whereas macrosteps were observed for samples after cooling down [21].…”

Realistic heterointerface model for excitonic states in growth-interrupted GaAs quantum wells

“…From structural investigations, it could be expected that the islands on the GaAs surface are much larger than on the AlAs surface due to the largely different surface mobility at the growth temperature of 630 • C. On GaAs surfaces after 60 s growth interruption, islands of several hundred nanometers were observed 2,3,4 . Earlier investigations, however, measured the GaAs surface after cooling, which can have a significantly larger correlation length than interior interfaces 17 . In order to test this expectation, we therefore discuss now the RRS spectra of excitons in interface structures with a large correlation length of the GaAs to AlAs interface of ξ 2 = 200 nm.…”