Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices

Wang, C.A.; Shiau, D.A.; Calawa, D.R.

doi:10.1016/j.jcrysgro.2003.11.030

Cited by 11 publications

(4 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Por sus potenciales aplicaciones optoelectrónicas [1,2] como son las celdas termofotovoltaicas [3,4], fotodiodos, láseres semiconductores [5,6] y detectores, las heteroestructuras basadas en GaSb han sido objeto de estudio durante las últimas decadas y se han propuesto nuevas configuraciones con el fin de lograr una mejor eficiencia en los dispositivos b a s a d o s e n e ste m ate r i a l . Pa r t i c u l a r m e nte l a heteroestructura de GaSb/GaInAsSb/GaSb (Figura 1) sucitado un gran interés debido a que ha permitido mejorar notablemente la eficiencia cuántica de las celdas termofotovoltaicas [7,8,9,10].…”

Section: Introductionunclassified

Crecimiento de heteroestructuras de GaSb/GalnAsSb/GaSb por la técnica de Epitaxia en Fase Líquida

Gómez

Cardona

De-Los-Ríos

et al. 2009

Rev. Invest. Univ. Quindío

View full text Add to dashboard Cite

En este trabajo se muestran algunos resultados preliminares del proceso de crecimiento por la técnica de Epitaxia en Fase Líquida (EFL) de la heteroestructura GaSb/GaInAsSb/GaSb. Se describe el proceso de fabricación de la heteroestructura así como también se muestran los resultado obtenidos de su caracterización por Difracción de Rayos X (DRX) y Fotoluminiscencia (FL) los cuales evidencian el crecimiento epitaxial de la heteroestructura.

show abstract

Section: Introductionunclassified

Crecimiento de heteroestructuras de GaSb/GalnAsSb/GaSb por la técnica de Epitaxia en Fase Líquida

Gómez

Cardona

De-Los-Ríos

et al. 2009

Rev. Invest. Univ. Quindío

View full text Add to dashboard Cite

show abstract

“…GaSb-based heterostructures are well recognized for their potential in MIR optoelectronics and thermophotovoltaics [1,2]. The implementation of these materials, however, has been hampered by an inability to reproducibly control their surface properties.…”

Section: Introductionmentioning

confidence: 99%

Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

Papis

Piotrowska

Kamińska

et al. 2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

The effects of electrochemical treatment in either 21%(NH 4 ) 2 S-H 2 O or 16%Na 2 S-C 3 H 7 OH solutions on the surface properties of GaSb, In 0.23 Ga 77 As 0.18 Sb 0.82 and Al 0.34 Ga 0.66 As 0.025 Sb 0.975 have been investigated by complementary use of Variable Angle Spectroscopic Ellipsometry (VASE) and X-ray Photoelectron Spectroscopy (XPS). We have shown that electrochemical sulphuration enables to produce 94-350 nm thick insulating overcoats with good surface morphology. The main components of the passivating layers are Ga 2 S 3 and Sb 2 S 5 when formed on GaSb, while additional components of In 2 S 3 , admixture of Al 2 O 3 and appearance of Al-As bond were observed on InGaAsSb and AlGaAsSb , respectively. The main feature distinguishing the effect of electrochemical treatment in Na 2 S-C 3 H 7 OH when comparing to those in (NH 4 ) 2 S-H 2 O is that passivating layers contain additional components of Na 2 SO 3 and/or Na 2 SO 4 .

show abstract

“…Complex device structures of InAsSb/GaInAsSb/AlGaAsSb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices and. of multi-stage mid-infrared InAsSb emitters have been reported [26][27] . Another type of device such as multi-color photodetector, which involves complex heterostructures, is proposed here.…”

Section: Introductionmentioning

confidence: 99%

Bias selective operation of Sb-based two-color photodetectors

et al. 2006

View full text Add to dashboard Cite

Multicolor detectors have a strong potential to replace conventional single-color detectors in application dealing with the simultaneous detection of more than one wavelength. This will lead to the reduction of heavy and complex optical components now required for spectral discrimination for multi-wavelengths applications. This multicolor technology is simpler, lighter, compact and cheaper with respect to the single-color ones.In this paper, Sb-based two-color detectors fabrication and characterization are presented. The color separation is achieved by fabricating dual band pn junction on a GaSb substrate. The first band consists of an InGaAsSb pn junction for long wavelength detection, while the second band consists of a GaSb pn junction for shorter wavelength detection. Three metal contacts were deposited to access the individual junctions. Surface morphology of multi-layer thin films and also device characteristics of quasi-dual band photodetector were characterized using standard optical microscope and electro-optic techniques respectively. Dark current measurements illustrated the diode behavior of both lattice-matched detector bands. Spectral response measurements indicated either independent operation of both detectors simultaneously, or selective operation of one detector, by the polarity of the bias voltage, while serially accessing both devices.

show abstract

Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices

Cited by 11 publications

References 22 publications

Crecimiento de heteroestructuras de GaSb/GalnAsSb/GaSb por la técnica de Epitaxia en Fase Líquida

Crecimiento de heteroestructuras de GaSb/GalnAsSb/GaSb por la técnica de Epitaxia en Fase Líquida

Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

Bias selective operation of Sb-based two-color photodetectors

Contact Info

Product

Resources

About