Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

Papis, E.; Piotrowska, A.; Kamińska, E.; Gołaszewska, K.; Kruszka, R.; Piotrowski, T.; Rzodkiewicz, W.; Szade, J.; Winiarski, A.; Wawro, A.

doi:10.1002/pssc.200674147

Cited by 12 publications

(5 citation statements)

References 17 publications

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“…Although we could not obtain reference data directly for gallium sulfide, the measured peaks for gallium (Fig. 5g, h) were singular, and their position was different from that of the two possible byproducts, metal gallium and gallium oxide 30,31 . In terms of chalcogens, no additional peaks were detected for the core/shell NPs, indicating that the sulfur in the shell occurred in the form of a metal sulfide (Fig.…”

Section: Structural Characterization Of Core/shell Nanoparticlesmentioning

confidence: 95%

Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

et al. 2018

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Nanoparticles of I-III-VI semiconductors are promising candidates for novel non-toxic fluorescent materials. However, removal of defect levels responsible for their broad-band emission has not been successful to date. The present study demonstrates, for the first time, the coating of core AgInS 2 nanoparticles-one of the I-III-VI group semiconductors with a bandgap in the visible region-with III-VI group semiconductors. The AgInS 2 /InS x and AgInS 2 /GaS x (x = 0.8-1.5) core/shell structures generate intense narrow-band photoluminescence originating from a band-edge transition at a wavelength shorter than that of the original defect emission. Microscopic analyses reveal that the GaS x shell has an amorphous nature, which is unexpected for typical shell materials such as crystalline lattice-matching ZnS. Singleparticle spectroscopy shows that the average linewidth of the band-edge photoluminescence is as small as 80.0 meV (or 24 nm), which is comparable with that of industry-standard II-VI semiconductor quantum dots. In terms of photoluminescence quantum yield, a value of 56% with nearly single-band emission has been achieved as a result of several modifications to the reaction conditions and post-treatment to the core/shell nanoparticles. This work indicates the increasing potential of AgInS 2 nanoparticles for use as practical cadmium-free quantum dots.

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Section: Structural Characterization Of Core/shell Nanoparticlesmentioning

confidence: 95%

Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

et al. 2018

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“…Following previous works of Pérotin et al [2] on passivation of GaSb by sulfur treatments, antimonide-based material passivation has been the subject, during the last few years, of intensive studies including GaSb [3][4][5][6] and InAs [7][8][9] as well as Ga(In,As)Sb alloy [10][11][12][13][14][15][16] for midinfrared photodiodes. Rather focused on InAs/GaSb SL detectors, various surface passivation techniques have been reported in the literature such as treatments with ammonium sulfide (NH 4 ) 2 S [17,18], silicon dioxide (SiO 2 ) [19][20][21], silicon nitride (Si 3 N 4 ) [22], sodium sulfide (Na 2 S) followed by SiO 2 or polyimide capping [23], Na 2 S deposited by the electrochemical process [24], polyimide encapsulation on surface cleaned structures [25,26] and epitaxial overgrowth of a lattice-matched high band gap material [27].…”

Section: Introductionmentioning

confidence: 98%

Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

Chaghi

Cervera

Aït‐Kaci

et al. 2009

Semicond. Sci. Technol.

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In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H 3 PO 4 ), citric acid (C 6 H 8 O 7 ) and H 2 O 2 , followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current-voltage measurements. The zero-bias resistance area product R 0 A above 4 × 10 5 cm 2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air.

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“…The peak was split into two Gaussian-Lorenzian peaks appearing at 1116.8 and 1117.8 eV, which corresponded to Ga in GaAs and Ga 2 S 3 , respectively, in accordance with the data from XPS standard database and the published report. 37 The existence of GaAs is also in agreement with the above analysis of As.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Recycling Arsenic from Gallium Arsenide Scraps through Sulfurizing Thermal Treatment

Zhan

Xie

et al. 2017

ACS Sustainable Chem. Eng.

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Due to its superior electronic properties, gallium arsenide (GaAs) is widely used in integrated circuits which are the core elements of most electric and electronic equipment. With the obsolescence of this equipment, a large amount of GaAs scraps is generated, which may possess potential threats to human beings and the environment if treated improperly. In this paper, an integrated process combining sulfurization and evaporation is proposed to recycle arsenic from GaAs scraps. The sulfides of arsenic can be easily evaporated and recycled. More importantly, the environmental requirements are satisfied because of the low toxicity of the arsenic sulfides. Using solid sulfur as the sulfurizing agent, 88.2% of arsenic can be extracted from GaAs scraps under the optimized conditions of 5 K/min heating rate, 453 K midsection temperature, 40 min midsection holding time, 1073 K final temperature, and 60 min corresponding holding time. The behavior of arsenic during the sulfurizing thermal process is discussed in details. After the instrument examinations of X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and X-ray phototelectron spectroscopy (XPS), the sulfurizing mechanism is explored and the reaction equation is deduced as 2GaAs + (2x + 3)S → 2AsS x + Ga2S3. This research can provide the theoretical foundation for recycling arsenic from GaAs scraps or other e-waste containing arsenic.

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Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

Cited by 12 publications

References 17 publications

Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

Recycling Arsenic from Gallium Arsenide Scraps through Sulfurizing Thermal Treatment

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