2006
DOI: 10.1103/physrevb.74.075311
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Realistic heterointerface model for excitonic states in growth-interrupted GaAs quantum wells

Abstract: We present a model for the disorder of the heterointerfaces in GaAs quantum wells including long-range components like monolayer island formation induced by the surface diffusion during the epitaxial growth process. Taking into account both interfaces, a disorder potential for the exciton motion in the quantum well plane is derived. The excitonic optical properties are calculated using either a time-propagation of the excitonic polarization with a phenomenological dephasing, or a full exciton eigenstate model … Show more

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Cited by 54 publications
(62 citation statements)
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“…Such a long dephasing time is likely to be due to radiative decay. 16 We find that in the present experiment using 200 fs pulses ͓see red dashed line in Fig. 2͑a͔͒, the measured ␥ increases approximately linearly with the excitation power, by about ϳ5 eV/ ͑J / cm 2 ͒, significantly more than observed previously in experiments using 2 ps long pulses.…”
supporting
confidence: 56%
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“…Such a long dephasing time is likely to be due to radiative decay. 16 We find that in the present experiment using 200 fs pulses ͓see red dashed line in Fig. 2͑a͔͒, the measured ␥ increases approximately linearly with the excitation power, by about ϳ5 eV/ ͑J / cm 2 ͒, significantly more than observed previously in experiments using 2 ps long pulses.…”
supporting
confidence: 56%
“…This sample has been previously investigated 4,7,15 and its properties have been simulated. 16 Here we focus on the fine-structure splitting ͑FSS͒ of the bright exciton into two nondegenerate, orthogonally linearly polarized transitions. 17 The direction of the linear polarization is dictated by the in-plane anisotropy of the localizing structure.…”
mentioning
confidence: 99%
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“…We use driven-dissipative GPE to describe the evolution of the polarized polariton fields: where we assumed a parabolic dispersion of polaritons, described by an effective mass m. Interactions between condensed polaritons with parallel and antiparallel spins are described by interaction strengths a 1 and a 2 , respectively. The potential term V 0 represents the disorder in the system, which was modelled by a randomly generated Gauss correlated disorder 35 . The polariton potential is further modified by a blueshift from interaction with the reservoirs, described by strength g R .…”
Section: Methodsmentioning
confidence: 99%
“…The disorder potential was generated using the procedure in ref. 28 to generate a single-layer disorder potential. The potential had an r.m.s.…”
mentioning
confidence: 99%