Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Kleinow, P.; Rutz, Frank; Aidam, R.; Bronner, W.; Heussen, H.; Walther, M.

doi:10.1016/j.infrared.2015.05.001

Cited by 21 publications

(14 citation statements)

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“…This has been shown by analyzing a temperature series of APD dark‐current measurements. Here, the existence of strong tunneling currents could be observed for temperatures below 260 K which are also present at room temperature ().…”

Section: Device Structure and Fabricationmentioning

confidence: 63%

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Phys. Status Solidi A

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We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) imaging applications with demand for high gain and low breakdown voltage. Devices are designed with separate absorption, grading, charge, and multiplication (SAGCM) layers. Special attention has been paid to the charge layer in order to optimize the structure for low band discontinuities and an appropriate electric field distribution. Hereof, a combination of a p-type grading layer and charge layer is presented. Band-edge profile calculations as well as electro-optical characterization results of the APDs will be discussed in this article. Our optimized APD structures reveal low punch-through and low breakdown voltage of V-pt approximate to 8.5 V and V-bd approximate to 2.3 V, respectively. A maximum gain of M > 300 in the linear operation mode is demonstrated at room temperature and M = 10 has been measured at 20 V bias

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Section: Device Structure and Fabricationmentioning

confidence: 63%

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Phys. Status Solidi A

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“…At room temperature, the APD is largely limited by diffusion, generation-recombination, and surface-leakage currents over the whole bias regime. [9] The full unamplified photocurrent for the APD layer structure described before ("1st design", broken lines in Figure 4) is reached at 10 V reverse voltage, which corresponds with the reach-through voltage, i.e. the voltage for which the absorber layer of the APD gets fully depleted.…”

Section: I-v Characteristicsmentioning

confidence: 90%

“…APDs with different charge-layer doping levels have been grown within a systematic epitaxy campaign and electro-optically characterized. Numerical simulation and experimental measurement results [9] [7] reveal, that only several percent of deviation can cause a significant change of the device behavior, e.g. a shift of the breakthrough voltage by several volts.…”

Section: Epitaxymentioning

confidence: 98%

“…According to Ref. [9], a doping concentration of the charge layer of 3.5 x 10 17 cm -3 to 4.0 x 10 17 cm -3 is optimal for achieving high gain values at relatively low bias voltages.…”

Section: Apd Designmentioning

confidence: 99%

“…At 20 V reverse bias, a gain value of 10 is already obtained. With moderate cooling, the breakthrough voltage can be further reduced by a few volts [9] , which results in lower dark current and higher gain.…”

Section: I-v Characteristicsmentioning

confidence: 99%

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SWIR photodetector development at Fraunhofer IAF

et al. 2015

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For surveillance and reconnaissance applications in the short-wave infrared (SWIR) spectral range, the imaging sys-tems have to cope with usually very low photon flux densities. Thus, dark-current and noise characteristics of the focal plane array (FPA) are demanding. On the other hand, the challenge of detecting extremely low photocurrents can be mitigated by utilizing an internal gain as provided by avalanche photodiodes (APDs). Fraunhofer IAF has recently started the development of InGaAs-based SWIR detectors. We report on the current development status covering design consi-derations, epitaxy, process technology and electro-optical characterization. Detector structures based on both, classical InGaAs PIN homojunction diodes as well as InGaAs/InAlAs APDs in separated-absorption-grading-charge-and-multi-plication layer heterostructures, have been grown by molecular beam epitaxy on InP. Diodes structures were fabricated with a dry-etch mesa process and a subsequent dielectric passivation of the mesa sidewalls. High-resolution FPAs with 640 x 512 pixels and a 15 ?m pixel pitch based on PIN diodes have been assembled to a SWIR camera system in cooperation with AIM Infrarot-Module GmbH. Design variations, in particular for the APDs, were assisted by band-edge-profile simulations. APD test structures as well as fan-out hybrids have been characterized, revealing gain values larger than 300 at room temperature

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