We study the operation of an 8.5 µm quantum cascade laser based on GaInAs/AlInAs lattice matched to InP using three different simulation models based on density matrix (DM) and nonequilibrium Green's function (NEGF) formulations. The latter advanced scheme serves as a validation for the simpler DM schemes and, at the same time, provides additional insight, such as the temperatures of the sub-band carrier distributions. We find that for the particular quantum cascade laser studied here, the behavior is well described by simple quantum mechanical estimates based on Fermi's golden rule. As a consequence, the DM model, which includes second order currents, agrees well with the NEGF results. Both these simulations are in accordance with previously reported data and a second regrown device

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The use of a tunable midinfrared external cavity quantum cascade laser for the standoff detection of explosives at medium distances between 2 and 5 m is presented. For the collection of the diffusely backscattered light, a high-performance infrared imager was used. Illumination and wavelength tuning of the laser source was synchronized with the image acquisition, establishing a hyperspectral data cube. Sampling of the backscattered radiation from the test samples was performed in a noncooperative geometry at angles of incidence far away from specular reflection. We show sensitive detection of traces of trinitrotoluene and pentaerythritol tetranitrate on real-world materials, such as standard car paint, polyacrylics from backpacks, and jeans fabric. Concentrations corresponding to fingerprints were detected, while concepts for false alarm suppression due to cross-contaminations were presented

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter

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