Experimental investigation of thermal conduction normal to diamond-silicon boundaries

Abstract

Passive chemical-vapor-deposited diamond layers have the potential to improve thermal conduction in electronic microstructures because of their high thermal conductivities. The thermal resistances for conduction normal to the boundaries of diamond layers, which must be small in order to realize this potential, have not been measured. This research develops two independent experimental methods that measure the total thermal resistance for conduction normal to diamond layers thinner than 5 pm on silicon substrates, yielding an upper bound for the thermal resistance of the diamond-silicon boundary. The data for layers as thin as 0.2 pm agree with predictions that account for phonon scattering on layer boundaries and couple the local scattering rate in the diamond to the gram size. The agreement lends support to the conclusion that the effective diamond-silicon boundary resistance is dominated by a highly localized volume resistance in the diamond near the interface. 0 1995 American Institute of Physics.

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

“…A few inconsistent results are available in the literature about the in-plane thermal transport in the first microns of polycrystalline diamond showing values ranging from a few W/mK up to 800 W/mK for layers thicknesses below 2 µm. [13,14,15,16,17,18,19,20,21,22,23, 24] Also 25 a strong inhomogeneity of the in-plane thermal conductivity through the diamond films has been reported, [11,12,21,22,24] although mostly for films larger 2 than a few micrometer thickness, due to challenges in measuring the thermal properties of very thin diamond films. Therefore a clear description of the heat transport in the complex near nucleation region of polycrystalline diamond is 30 still lacking.…”

The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers

“…Equation (1) accurately fits our data, though for thinner or less defective AlN films, it may be necessary to consider ballistic phonon transport based on the Boltzmann Transport Equation. [21][22][23] TBR sub is now isolated from TBR top . Quantitatively, the three values of TBR sub þTBR top listed in Table II result from combinations of the following four interfaces: AlN/CMPSiC, AlN/MP-SiC, Ti/AlN, and SiO 2 /AlN.…”

An inverse problem in estimating the relaxation time for nanoscale phonon radiative transfer problem

“…However, the measurement data must contain measurement errors. Therefore, we do not expect the functional equation (6) to be equal to zero at the final iteration step. Following the experiences of the authors [15][16][17][18][19][20], the discrepancy principle is used as the stopping criterion, i.e.…”

“…To date, several groups, such as Che et al [4], Chen [5], Goodson et al [6], Graebner et al [7], Lukes et al [8], Majumdar [9], Maruyama [10] and Schelling et al [11], have chosen different approaches for predicting the thermal conductivity of thin dielectric films, superlattices, nanowires and more recently nanotubes. The relaxation time is still involved in all the above mentioned approaches.…”