Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Li, Zhipeng; Zhang, Feihu; Zhang, Yong; Luo, Xichun

doi:10.1007/s00170-017-0267-4

Cited by 34 publications

(9 citation statements)

References 45 publications

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“…In the high-frequency region, the Raman bands at about 1512 and 1707 cm −1 shifts are attributed to the second-order Raman scattering band of 6H-SiC. 37 In addition, there was almost no change in the Raman shift of each Raman band at different implantation doses, indicating that there was almost no residual strain in the implantation region.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Rommel

et al. 2018

Journal of Micromanufacturing

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In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

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Section: Resultsmentioning

confidence: 99%

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Rommel

et al. 2018

Journal of Micromanufacturing

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“…While the longitudinal optic (LO) of Raman peak at 522.1 cm -1 is identified as the crystalline Si. Moreover, the FTO mode at 796.0 cm -1 is also ascribed to 3C-SiC polytype [34,36]. As a result, the RB-SiC ceramic has been proved to consist of 6H-SiC, 3C-SiC and Si phases.…”

Section: Machined Surface/subsurface Damagesmentioning

confidence: 90%

“…The surface/subsurface damage, such as residual stress [30,31], phase transformation [32,33], disorder and stacking faults [34] can be characterized by Raman spectroscopy through the Raman parameters as bandwidth, intensity, frequency shift and polarization properties of the Raman bands [35]. Therefore, the machined surface of RB-SiC ceramics ground at different temperatures was irradiated by the Raman laser beams (325 nm) with a laser power of 20 mW.…”

Section: Machined Surface/subsurface Damagesmentioning

confidence: 99%

Analysis of diamond wheel wear and surface integrity in laser-assisted grinding of RB-SiC ceramics

Rao

Zhang

et al. 2019

Ceramics International

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Laser-assisted grinding provides a promising solution for achieving costefficient machining of hard and brittle materials. However, the heat generated by laser may cause the wear of diamond grinding wheel, including the wear of both diamond grits and bond material. Consequently, wheel wear has a knock-on effect on the ground surface roughness. Moreover, the laser irritation may also induce damage in the machined surface. This paper focuses on the investigation of wear of diamond grinding wheel and surface integrity in laser-assisted grinding of RB-SiC ceramics. Different temperatures were obtained by setting the laser power to explore the influence of heat on wheel wear and surface integrity. The wear modes and mechanism of the diamond grits and bond material were analyzed by combination of SEM detection and energy dispersion spectrum analysis. The results revealed that adhesion and pullout of diamond grits in laser-assisted grinding were the remarkable difference from those in conventional grinding due to the thermal softening of both RB-SiC specimen and bond material of the grinding wheel. Surface roughness was then improved owing to the increase in active grits. The Raman spectra of the machined surface also revealed different stress conditions and microstructures of the Si and SiC Phase in RB-SiC ceramics. These results provided insight on quality control in laser-assisted machining of RB-SiC ceramics.

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“…The propagation and interaction between cracks are the main types responsible for material peeling, and scratch depth and separation of adjacent scratches dictate the interaction of cracks [11]. Meng et al [12] and Li et al [13,14] reveled that phase transformation and dislocation movement dominate the ductile removal of 6H-SiC and reaction-bonded SiC ceramics by completing a Transmission Electron Microscopy (TEM) test of the subsurface damaged by scratches. In the molecular dynamic (MD) simulation, Xiao et al [15] point out that Frank partial dislocations and basal plane edge dislocations are the primary mechanism for the ductile deformation of 6H-SiC.…”

Section: Introductionmentioning

confidence: 99%

Strain Rate Effect on the Ductile Brittle Transition in Grinding Hot Pressed SiC Ceramics

Huang

Zhang

2020

Micromachines

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Surface and subsurface damage are still persistent technical challenges for the abrasive machining hot pressed-silicon carbide (HP-SiC) ceramics. Therefore, an investigation of the material behavior and critical depth of ductile to brittle transition (DBT) is essential for improving high precision and quality grinding HP-SiC ceramics. In this paper, single-grit grinding experiments with different scratch speed were conducted to study strain rate effect on the critical depth of DBT. The nanoindentations were performed to test the hardness and Young’s modulus changes of DBT position under different scratch speeds. The material removal mechanism and phase changes underneath the scratch groove were investigated using Raman tests. Based on the specific energies consumed in ductile and brittle modes of machining, a theoretical model of the critical depth of DBT was developed. The experimental results suggest that high scratch speeds generate high nanohardness, high Young‘s modulus and high critical depth of DBT of HP-SiC ceramics. The measured critical depth of DBT shows a good agreement with the predicted value calculated by the developed model. The subsurface damage depth reduced with high strain rate. Furthermore, the Raman results revealed that dislocations and amorphous transformation dominated the ductile removal mechanism of HP-SiC grinding. The fracture chips and subsurface damage depth was determined by the lateral crack and median crack, respectively. This paper’s results provide a fundamental understanding of the effect of grinding speed on the material removal mode of HP-SiC ceramics.

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Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Cited by 34 publications

References 45 publications

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Analysis of diamond wheel wear and surface integrity in laser-assisted grinding of RB-SiC ceramics

Strain Rate Effect on the Ductile Brittle Transition in Grinding Hot Pressed SiC Ceramics

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