Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT

Yang, Guangan; Wu, Wengan; Zhang, Xingyao; Tang, Pengyu; Yang, Jing; Zhang, Long; Liu, Siyang; Sun, Weifeng

doi:10.1016/j.sse.2020.107952

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…It is evident that with the cumulative increase in total radiation dose, the threshold voltage gradually decreases. The simulation results are consistent with the conclusions derived from the theoretical equation and the experimental results of the TID effect on the transfer characteristics, as reported in references [22]- [24].…”

Section: Transfer Characteristicssupporting

confidence: 91%

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Simulation study on total ionizing dose effect of IGBT gamma irradiation

Fang,

Hao,

Zhao

et al. 2023

J. Inst.

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The insulated gate bipolar transistor (IGBT) has emerged as a prominent high-power semiconductor device due to its excellent overall performance. It is widely utilized in various fields, including aerospace. Due to prolonged operation in complex irradiation environments, the performance of IGBTs is susceptible to degradation and damage. Therefore, conducting research on the variation of IGBT characteristics under irradiation environments is crucial to ensuring their long-term functionality in extended space missions. To evaluate and analyze the total ionizing dose (TID) effect of IGBTs during operation, this study adopts a trench IGBT as the device model. Utilizing the finite element method, technology computer-aided design (TCAD) is employed to simulate and analyze the electrical characteristic changes of IGBTs under different total radiation doses. The simulation results are subsequently validated through theoretical analysis. The simulation results indicate that gamma radiation significantly affects the overall electrical characteristics of IGBTs.

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Section: Transfer Characteristicssupporting

confidence: 91%

“…The device voltage drop will vary with the total dose of radiation. The simulation results are consistent with the conclusions derived from the theoretical formulas and the experimental results of the TID effect on the transfer characteristics, as documented in references [22]- [24].…”

Section: Output Characteristicssupporting

confidence: 89%

Simulation study on total ionizing dose effect of IGBT gamma irradiation

Fang,

Hao,

Zhao

et al. 2023

J. Inst.

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Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices

Cui

Zheng

et al. 2023

Electronics

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Silicon-based vertical double-diffused MOSFET (VDMOS) devices are important components of the power system of spacecraft. However, VDMOS is sensitive to the total ionizing dose (TID) effect and may have TID response variability. The within-batch TID response variability on silicon-based VDMOS devices is studied by the 60Co gamma-ray irradiation experiment in this paper. The variations in device parameters after irradiation is obtained, and the damage mechanism is revealed. Experimental results show that the standard deviations of threshold voltage, subthreshold swing, output capacitance, and diode forward voltage increase, while the standard deviation of maximum transconductance decreases after irradiation. The standard deviation of on-state resistance is basically unchanged before and after irradiation. By separating the trapped charges generated by TID irradiation, it is found that the deviation of the oxide trapped charges and the interface traps increase with the increase in the total dose. The reasons for the variation in device parameters after irradiation are revealed by establishing the relationship between the trapped charges and the electrical parameters before and after irradiation.

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Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT

Cited by 2 publications

References 14 publications

Simulation study on total ionizing dose effect of IGBT gamma irradiation

Simulation study on total ionizing dose effect of IGBT gamma irradiation

Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices

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