Experimental measurements of effective mass in near-surface InAs quantum wells

Yuan, Joseph; Hatefipour, Mehdi; Magill, Brenden A.; Mayer, William; Dartiailh, Matthieu; Sardashti, Kasra; Wickramasinghe, Kaushini; Khodaparast, Giti A.; Matsuda, Yasuhiro H.; Kohama, Yoshimitsu; Zhuo, Yi; Thapa, Sunil; Stanton, C. J.; Shabani, Javad

doi:10.1103/physrevb.101.205310

Cited by 22 publications

(27 citation statements)

References 33 publications

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“…The graph shows that the measured first three points near B~45 T (they are indicated by squares (solid boxes)) agree satisfactorily with the theoretical line g CR ð1, 0Þ. Experimental points [7] g CR ðn, NÞ obtained at temperature T = 20:5 K. Therefore, as can be seen from Figure 2, the Landau levels of the first subband lying above the Fermi level E F cannot be partially populated. The main level of the second subband will be partially populated.…”

Section: Dependence Of the Effective G-factor Of Electron On The Magnetic Fieldsupporting

confidence: 72%

“…Figure 4 shows comparisons of calculation results g CR ðn, NÞ obtained from a three-band model with experimental data [7].…”

Section: Dependence Of the Effective G-factor Of Electron On The Magnetic Fieldmentioning

confidence: 99%

“…The calculations will be carried out on the basis of the three-band Kane model and the QW model of infinite depth. On the basis of these calculations, possible interpretations of the experimental results are discussed [7].…”

Section: Introductionmentioning

confidence: 99%

“…In weak magnetic fields, the effective carrier mass at the Fermi level can be determined. With the help of the CR, one can reveal the nonparabolicity of the dispersion law and obtain information about the features of the dispersions of new materials [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…In work [7], an InAs QW based on the InAs/In 0.81-Ga 0.19 As/In x Al 1−x As (x = 0:52-0.81) structure was studied. The CR was used to measure the effective mass m CR and g CR electron factor at strong magnetic fields (up to 70 T) and at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Three-Band Simulation of the $g$ -Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

Gulyamov

Abdulazizov

Baymatov

2021

Journal of Nanomaterials

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The results of calculations of the Landau level and cyclotron g -electron factor in strong magnetic fields in an InAs quantum well based on both the three-band and two-band models are presented. The calculations were performed in the approximation of infinity of the depth of the quantum well, taking into account the Landau level of the second subband. It is shown that the three-band model satisfactorily describes the experimental data.

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Section: Dependence Of the Effective G-factor Of Electron On The Magnetic Fieldsupporting

confidence: 72%

“…Figure 4 shows comparisons of calculation results g CR ðn, NÞ obtained from a three-band model with experimental data [7].…”

Section: Dependence Of the Effective G-factor Of Electron On The Magnetic Fieldmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Three-Band Simulation of the $g$ -Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

Gulyamov

Abdulazizov

Baymatov

2021

Journal of Nanomaterials

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Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

et al. 2022

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Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of g ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the g-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g-factor engineering in semiconductor structures.

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Controlling Fermi level pinning in near-surface InAs quantum wells

Strickland

Hatefipour

Langone

et al. 2022

Applied Physics Letters

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Hybrid superconductor–semiconductor heterostructures are a promising platform for quantum devices based on mesoscopic and topological superconductivity. In these structures, a semiconductor must be in close proximity to a superconductor and form an Ohmic contact. This can be accommodated in narrow bandgap semiconductors, such as InAs, where the surface Fermi level is positioned close to the conduction band. In this work, we study the structural properties of near-surface InAs quantum wells and find that surface morphology is closely connected to low-temperature transport, where electron mobility is highly sensitive to the growth temperature of the underlying graded buffer layer. By introducing an In0.81Al0.19As capping layer, we show that we change the surface Fermi level pinning of the In0.81Al0.19As thin film as compared to the In0.81Ga0.19As, giving rise to a tuning of the Fermi level in the InAs layer. Experimental measurements show a strong agreement with Schrödinger–Poisson calculations of the electron density, suggesting the conduction band energy of the In0.81Ga0.19As and In0.81Al0.19As surface is pinned to 40 and 309 meV above the Fermi level, respectively.

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Experimental measurements of effective mass in near-surface InAs quantum wells

Cited by 22 publications

References 33 publications

Three-Band Simulation of the $g$ -Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

Three-Band Simulation of the $g$ -Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Controlling Fermi level pinning in near-surface InAs quantum wells

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Experimental measurements of effective mass in near-surface InAs quantum wells

Cited by 22 publications

References 33 publications

Three-Band Simulation of the g -Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

Three-Band Simulation of the g -Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Controlling Fermi level pinning in near-surface InAs quantum wells

Contact Info

Product

Resources

About

Three-Band Simulation of the $g$ -Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

Three-Band Simulation of the $g$ -Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields