No abstract

Superconductors that possess both broken spatial inversion symmetry and spin-orbit interactions exhibit a mix of spin singlet and triplet pairing. Here, we report on measurements of the superconducting properties of electron-doped, strained SrTiO 3 films. These films have an enhanced superconducting transition temperature and were previously shown to undergo a transition to a polar phase prior to becoming superconducting. We show that some films show signatures of an unusual superconducting state, such as an in-plane critical field that is higher than both the paramagnetic and orbital pair breaking limits. Moreover, nonreciprocal transport, which reflects the ratio of odd vs. even pairing interaction, is observed. Together, these characteristics indicate that these films provide a tunable platform for investigations of unconventional superconductivity.

SrTiO 3 is an incipient ferroelectric that is believed to exhibit a prototype displacive, soft mode ferroelectric transition when subjected to mechanical stress or alloying. We use high-angle annular darkfield imaging in scanning transmission electron microscopy to reveal local polar regions in the roomtemperature, paraelectric phase of strained SrTiO 3 films, which undergo a ferroelectric transition at low temperatures. These films contain nanometer-sized domains in which the Ti columns are displaced. In contrast, these nanodomains are absent in unstrained films, which do not become ferroelectric. The results show that the ferroelectric transition of strained SrTiO 3 is an order-disorder transition. We discuss the impact of the results on the nature of the ferroelectric transition of SrTiO 3 .

Hybrid superconductor–semiconductor heterostructures are a promising platform for quantum devices based on mesoscopic and topological superconductivity. In these structures, a semiconductor must be in close proximity to a superconductor and form an Ohmic contact. This can be accommodated in narrow bandgap semiconductors, such as InAs, where the surface Fermi level is positioned close to the conduction band. In this work, we study the structural properties of near-surface InAs quantum wells and find that surface morphology is closely connected to low-temperature transport, where electron mobility is highly sensitive to the growth temperature of the underlying graded buffer layer. By introducing an In0.81Al0.19As capping layer, we show that we change the surface Fermi level pinning of the In0.81Al0.19As thin film as compared to the In0.81Ga0.19As, giving rise to a tuning of the Fermi level in the InAs layer. Experimental measurements show a strong agreement with Schrödinger–Poisson calculations of the electron density, suggesting the conduction band energy of the In0.81Ga0.19As and In0.81Al0.19As surface is pinned to 40 and 309 meV above the Fermi level, respectively.