Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

Ōhashi, Tatsuya; Takahashi, T.; Kodera, Tetsuo; Oda, Satoshi; Uchida, Kenzo

doi:10.7567/ssdm.2012.e-5-1

Cited by 2 publications

(2 citation statements)

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“…However, in SOI MOSFETs, the use of D ac = 12-13 eV results in the overestimation of electron mobility, suggesting that the effective isotropic D ac is even higher than 13 eV in SOI channels and may exhibit SOI thickness (T Si ) dependence. In this study, we employed a spatially variable D ac model (vD ac model), which has been proposed by Ohashi and coworkers, 20,21) to consider T Sidependent D ac . In the vD ac model, D ac is treated as spatially variable, that is, D ac sharply increases at MOS interfaces, as shown in Fig.…”

Section: Scattering Models In MC Simulationmentioning

confidence: 99%

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Effects of increased acoustic phonon deformation potential and surface roughness scattering on quasi-ballistic transport in ultrascaled Si-MOSFETs

Koba

Ishida

Kubota

et al. 2014

Jpn. J. Appl. Phys.

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It is a common view that ballistic transport is enhanced by channel length scaling because of a decreased scattering number. On the other hand, the acoustic phonon (AP) scattering rate is higher in silicon-on-insulator (SOI) MOSFETs than in bulk Si-MOSFETs; moreover, surface roughness (SR) scattering caused by spatial fluctuation of quantized subbands emerges in extremely scaled SOI channels. Therefore, the influences of these scattering mechanisms on ballistic transport in ultrathin-body Si-MOSFETs are examined in this paper using a Monte Carlo simulation technique. First of all, the effect of increased AP scattering rate on the drain current and ballistic efficiency is found to be negligible. Furthermore, contrary to the common view, ballistic transport in double-gate MOSFETs is shown to be degraded when the channel length decreases to less than 10 nm, mainly owing to SR scattering intensified by the spatial fluctuation of quantized subbands. The gate and drain bias voltage dependencies of ballistic efficiency are also discussed.

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Section: Scattering Models In MC Simulationmentioning

confidence: 99%

“…For the bulk MOS structure depicted in Fig. 1(a), the following expression has been proposed: 20,21)…”

Section: Si Metalmentioning

confidence: 99%