Experimental research on the sensitivity and noise level of bipolar and CMOS integrated magnetotransistors and judgement of their applicability in weak-field magnetometers

Chaplygin, Yu. A.; Galushkov, A. I.; Романов, И. М.; Volkov, S. I.

doi:10.1016/0924-4247(95)01028-9

Cited by 11 publications

(3 citation statements)

References 4 publications

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“…The measured spectrum of a noise voltage depending on the frequency of measurement is shown in Figure 5. The results of the measurement demonstrate that, in contrast to the results in Chaplygin et al (1995), there is no low-frequency noise in the 3CBMTBW of the type 1/f. The voltage magnitudes of the noise at frequencies from 1 Hz to 100 kHz change at Vdd = 9 V from 20 nV to 300 nV, which is much lower than in Chaplygin et al (1995).…”

Section: Noisecontrasting

confidence: 39%

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Microtesla Sensitivity and Noise of a Triple Collector Magnetotransistor

Amelichev¹,

Tikhonov²,

Cheremisinov³

2013

MAS

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The sensitivity of a bipolar magnetotransistor with the base in a well has been studied in a microtesla magnetic field. The noise was experimentally measured to compare the performance of two designs of dual-collector lateral bipolar magnetotransistor, which are formed in a uniformly doped substrate or in a diffused well. The noise decreases in a diffused well. Acquiring an adequate understanding of the mechanism underlying the operation of the device should help to improve its magnetic sensitivity. A low velocity of surface recombination and an extraction of the injected electrons using a base-well р-n junction determined the operating mode with the deviation of two charge carrier flows.

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Section: Noisecontrasting

confidence: 39%

“…We employed the same measuring system as in Chaplygin et al, 1995). Samples of the circuits were placed in a box screened from electromagnetic interference and supplied from a 1.5-to 9-V battery.…”

Section: Noisementioning

confidence: 99%

Microtesla Sensitivity and Noise of a Triple Collector Magnetotransistor

Amelichev¹,

Tikhonov²,

Cheremisinov³

2013

MAS

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“…In the presence of magnetic fields applied perpendicular to the device surface, the charged carriers are deflected as a consequence of the Lorentz force leading to unequal current flow at the split contacts (see figure 3). The silicon split-current magnetic sensors have been studied previously [8][9][10][11][12]. The relative sensitivity of the double-drain sensors is calculated by [13]:…”

Section: Introductionmentioning

confidence: 99%

Analysis of GaN MagHEMTs

Faramehr

Janković

Igić

2018

Semicond. Sci. Technol.

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The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T −1 . We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S r =6.78%T −1 ) and 500K (S r =4.91%T −1 ) compared to the sensitivity measured at 300 K (S r =11.98%T −1 ). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T −1 to 23.29%T −1 using the commercial simulation toolbox Atlas, by Silvaco.

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