Experimental studies of the electronic structure of graphene

Bostwick, Aaron; McChesney, J. L.; Ohta, Taisuke; Rotenberg, Eli; Seyller, Thomas; Horn, Karsten

doi:10.1016/j.progsurf.2009.08.002

Cited by 90 publications

(57 citation statements)

References 156 publications

(277 reference statements)

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“…A well established pathway is thermal decomposition of SiC surfaces. 4,[6][7][8] The fact that SiC is a wide band gap semiconductor allows direct connection of graphene on SiC wafer to electronics. Another pathway, known for decades, is epitaxial growth on transition metal surfaces by hydrocarbon decomposition in a controlled way.…”

Section: Introductionmentioning

confidence: 99%

Graphene on Ir(111) characterized by angle-resolved photoemission

et al. 2011

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Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moir\'e superstructure present in the system, namely minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the variation of photon energy, relative changes of the pi- and sigma-band intensities are demonstrated.Comment: 8 pages, 6 figures in published for

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Section: Introductionmentioning

confidence: 99%

Graphene on Ir(111) characterized by angle-resolved photoemission

et al. 2011

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“…22 In particular, understanding the atomic dynamics of graphene is interesting in view of the high thermal conductivity of graphene. The simplest view of the dynamics of atoms in twodimensional systems is given by the Debye temperature, [23][24][25] which is related to the thermal vibration of the surface atoms.…”

Section: Introductionmentioning

confidence: 99%

Helium reflectivity and Debye temperature of graphene grown epitaxially on Ru(0001)

et al. 2011

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It is shown that the surface of an epitaxial graphene monolayer grown on Ru(0001) could be used as a quite efficient external mirror for He-atom microscopy, with a specular reflectivity of 20% of the incident beam. Furthermore, the system is stable up to 1150 K, and the He reflectivity remains almost unchanged after exposure to air. Additionally, the high reflectivity for H 2 molecules (11%) opens up the development of a H 2 microprobe suitable for lithography. The Debye temperature for this epitaxial graphene monolayer has been determined from a study of the temperature dependence of the He specular intensity as a function of incident parameters. A value of 1045 K has been obtained, which is much higher than the 590 K reported for graphite under similar conditions, and close to the value of 1287 K calculated for isolated graphene.

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“…Graphene, a flat monolayer of carbon atoms forming a two-dimensional (2D) honeycomb structure, has been named 'the simplest complex material' [1]. It exhibits mobilities in excess of any observed in conventional bulk semiconductors [2], and allows the observation of relativistic quantum mechanics on a condensed matter scale [3], but can be produced using Scotch tape [4].…”

Section: Introductionmentioning

confidence: 99%

Terahertz Properties of Graphene

Docherty

Johnston

2012

J Infrared Milli Terahz Waves

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Graphene has proved itself as being unique in terms of fundamental physics, and of particular importance for post-silicon electronics. Research into graphene has divided into two branches, one probing the remarkable electronic and optical properties of graphene, and the other pursuing technologically viable forms of the material. Terahertz time domain spectroscopy (THz TDS) is a powerful tool for both, able to characterise the free carrier response of graphene and probe the inter and intraband response of excited carriers with sub-ps time resolution. We review THz TDS and related THz measurements of graphene.

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Experimental studies of the electronic structure of graphene

Cited by 90 publications

References 156 publications

Graphene on Ir(111) characterized by angle-resolved photoemission

Graphene on Ir(111) characterized by angle-resolved photoemission

Helium reflectivity and Debye temperature of graphene grown epitaxially on Ru(0001)

Terahertz Properties of Graphene

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