Experimental Study and Device Design of NO, NO<sub>2</sub>, and NH<sub>3</sub>Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Bishop, Chris; Halfaya, Yacine; Soltani, A.; Sundaram, S.; Li, Xin; Streque, Jérémy; Gmili, Youssef El; Voss, Paul L.; Salvestrini, Jean Paul; Ougazzaden, A.

doi:10.1109/jsen.2016.2593050

Cited by 42 publications

(39 citation statements)

References 29 publications

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“…Both S and ΔI increased with increasing Wg/Lg. These findings might appear different from modeling results of [4], predicting a reduction in sensitivity with shorter Lg. In our case however, the higher S could be attributed to a less increase in baseline current value.…”

Section: Resultscontrasting

confidence: 99%

“…AlGaN/GaN Schottky diode and high electron mobility transistor (HEMT) based sensors with catalytic metal sensing electrodes (anode or gate) have been previously demonstrated for detection of various gases e.g. NH3, H2S, H2, NOx, CO [3][4][5][6]. Gate electrode dimensions i.e.…”

Section: Introductionmentioning

confidence: 99%

“…However, unlike conventional FET, their device did not exhibit saturation across entire bias range and operated only in the resistive region. AlGaN/GaN HEMT sensor layout modeling was performed by [4] in order to determine the optimal design. The results suggested that there is a trade-off between device sensitivity (S) and absolute signal variation (ΔI) with larger Wg/Lg resulting in lower S and increased ΔI.…”

Section: Introductionmentioning

confidence: 99%

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Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Sokolovskij¹,

Iervolino

Zhao

et al. 2017

2017 Ieee Sensors

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This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a Wg/Lg from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.

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Section: Resultscontrasting

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Sokolovskij¹,

Iervolino

Zhao

et al. 2017

2017 Ieee Sensors

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“…AlGaN/GaN HEMTs have been shown to be efficient sensors for a broad range of physical parameters, in either liquid or dry condition, such as pressure sensors [2,3], gas detection [4,5], pH sensors [6] and, more recently, used as biosensors for the rapid detection of viruses [7]. These achievements could pave the way for the use of these HEMT transistors in electronic nose development, particularly useful for VOC detection.…”

Section: Introductionmentioning

confidence: 99%

Impact of the Sensor Temperature on Low Acetone Concentration Detection Using AlGaN/GaN HEMTs

Ahaitouf

Halfaya

Sundaram

et al. 2020

7th International Electronic Conference on Sensors and Applications

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In this work, we report on AlGaN/GaN HEMT sensors for acetone concentration below 100ppm and in a broad range of the sensor temperature varying from RT to 300 ∘C. At RT, in the presence of acetone, a smooth and monotonic decrease of the current is observed with a rather large response of 15A/ppm and with a large response time (several minutes) and memory effect. At a high temperature (300 ∘C), a current decrease is first observed just after the acetone injection, then followed by an increase, which saturates and stabilizes at a constant value. In order to clarify this unexpected behaviour, a detailed study of the sensor response versus the temperature and acetone injection flow is carried out. The outcome of this investigation is that a competition between the current variations induced by both the sensor and gas flow temperature difference from one side and the acetone dipolar moment from the other side can explain this transient. Our study highlights that AlGaN/GaN HEMT-based sensors allow for very sensitive acetone detection at both room and high temperatures. Nevertheless, care must be taken during the characterization and operation of such sensors especially at high operating temperatures. On the other hand, the high temperature operation helps to improve the sensor response and suppress the memory effect.

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“…Therefore, with the aim of long-term monitoring of storage facilities, we propose to use AlGaN/GaN-based HEMT (High Electron Mobility Transistor) sensors (see Fig. 1, with functionalized gate) which have been shown to be able to handle harsh conditions [4,5]. Such devices can be also grown on top of h-BN layer allowing their lift-off and report on other substrate to improve their performance [6].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Sc₂O₃ Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

Sama

Bouhnane²,

Gautier³

et al. 2019

2019 Ieee Sensors

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In this work, an all-solid-state electrolyteinsulator-semiconductor (EIS) device is developed for pH sensing performance evaluation of insulating materials. The EIS capacitor incorporates scandium oxide (Sc2O3) sensing film deposited on undoped gallium nitride (u-GaN) by thermal evaporation. The structural and morphological features of the thin films annealed at different temperature (650-850°C), were investigated through X-ray diffraction and AFM analysis. A gold wire with diameter of 25 pm was bonded on the device and served as the quasi reference electrode for the C-V measurements and pH sensitivity characterizations. After correction of the measured capacitance regarding the pH dependent variation of the standard potential E0(pH) of gold, the Sc2O3 EIS capacitor prepared with an annealing at 650°C exhibited a linear response with a sensitivity of 40 mV/pH while the device with the as-deposited Sc2O3 film showed nonlinear behavior and, those annealed at temperature higher than 650°C were shown to be insensitive to pH variation.

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Experimental Study and Device Design of NO, NO₂, and NH₃Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Cited by 42 publications

References 29 publications

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Impact of the Sensor Temperature on Low Acetone Concentration Detection Using AlGaN/GaN HEMTs

Investigation of Sc₂O₃ Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

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Experimental Study and Device Design of NO, NO2, and NH3Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Cited by 42 publications

References 29 publications

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Impact of the Sensor Temperature on Low Acetone Concentration Detection Using AlGaN/GaN HEMTs

Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

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Product

Resources

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Experimental Study and Device Design of NO, NO₂, and NH₃Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Investigation of Sc₂O₃ Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor