Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

Sun, Yabin; Fu, Jun; Wang, Yudong; Zhou, Wei; Liu, Zhihong; Li, Xiaojin; Shi, Yanling

doi:10.1016/j.microrel.2016.08.008

Cited by 8 publications

(4 citation statements)

References 14 publications

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“…This phenomenon can be attributed to the drift velocity of carrier and the collection amount of the charge reduction at a unit time, owing to collector bias voltage decreasing. [18,19] Consequently, it takes a long time to correct the electron-hole pairs generated by ionization along the incident track. Moreover, it can be concluded that when the incidence is from the emitter center, the device is particularly susceptible to SEE.…”

Section: Setting Of Experimental Conditionsmentioning

confidence: 99%

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Feng 冯,

Guo 郭,

Liu 刘

et al. 2024

Chinese Phys. B

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In this article, the single event effect (SEE) sensitivity of silicon-germanium heterojunction bipolar transistor (SiGe HBT) device using 100 MeV proton irradiation was investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the proton crosses the larger collector-substrate (CS) junction. Furthermore, this article also conducted experimental studies using 100 MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiments are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current is significantly reduced. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the 100 MeV proton experiment. To further evaluate the tolerance of the device, the impact of proton on SiGe HBT after gamma-ray (60Coγ) irradiation was investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

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Section: Setting Of Experimental Conditionsmentioning

confidence: 99%

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Feng 冯,

Guo 郭,

Liu 刘

et al. 2024

Chinese Phys. B

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“…Therefore, these bias conditions replicate the most sensitive state to SEEs. [25][26][27] Concretely, the initial voltage boundary conditions of all terminals of the SiGe HBT are set to 0 V in the electrode section of Sentaurus Device, and then these boundary conditions are ramped to the worst biasing conditions in the Solve section of the command file using the quasistationary command. Ohmic contacts are implemented through the Dirichlet boundary condition, in which the quasi Fermi potentials of majority and minority carriers are equal to the applied voltage on the electrode.…”

Section: Simulation Conditionsmentioning

confidence: 99%

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor*

Wei¹,

He²,

Li³

et al. 2019

Chinese Phys. B

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This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the single-event transient (SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor (SiGe HBT). The ion-induced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design (TCAD) simulation. The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected. With a proton fluence of 5×1013 cm−2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation (DTI), where prompt funneling collection is the dominating mechanism. Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.

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“…Typical CML circuits consist of two main parts, the AC differential signal path and the DC current source, in which a current-mirror structure is commonly implemented [11,12]. The bias circuits have proven to be very sensitive to single-event effects (SEEs) in many different analog and mixed-signal applications, since they affect the overall operation conditions of circuits [13][14][15]. As a RHBD solution to mitigate SET, a negative feedback in DC SiGe HBT current mirrors was proposed and a significant reduction in the peak transient and settling time was also achieved [12].…”

Section: Introductionmentioning

confidence: 99%

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

Sarker

Jung

Ildefonso

et al. 2020

Sensors

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It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time significantly decrease. In the present work, we demonstrate how radiation hardening by design (RHBD) techniques utilized in DC bias blocks only (current mirrors) can also improve the SET response in AC signal paths of switching circuits (e.g., current-mode logic, CML) without any additional hardening in those AC signal paths. Four CML circuits both with and without RHBD current mirrors were fabricated in 130 nm SiGe HBT technology. Two existing RHBD techniques were employed separately in the current mirrors of the CML circuits: (1) applying internal negative feedback and (2) adding a large capacitor in a sensitive node. In addition, these methods are also combined to analyze the overall SET performance. The single-event transients of the fabricated circuits were captured under the two-photon-absorption laser-induced single-event environment. The measurement data clearly show significant improvements in SET response in the AC signal paths of the CML circuits by using the two radiation hardening techniques applied only in DC current mirrors. The peak output transient current is notably reduced, and the settling time upon a laser strike is shortened significantly.

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Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

Cited by 8 publications

References 14 publications

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor*

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

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