Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2&amp;#x03C9; method and modified pulsed IV

Beppu, Nobuyasu; Oda, Shunri; Uchida, Ken

doi:10.1109/iedm.2012.6479120

Cited by 30 publications

(7 citation statements)

References 6 publications

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“…Therefore, the AC conductance method has been widely used for the SHE evaluation of nanoscale devices including FinFETs [16] and nanowire FETs [17], [18]. However, it has been recently reported that the accuracy of the AC conductance method is questionable [19]. Furthermore, AC conductance evaluations of thin BOX devices are complicated because of existence of the parasitic capacitance between the device and its substrate [20]- [22].…”

Section: Introductionmentioning

confidence: 99%

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

Takahashi

Matsuki

Shinada

et al. 2016

IEEE J. Electron Devices Soc.

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We demonstrate clear self-heating effects (SHE) of bulk and SOI MOSFETs for various SOI/BOX thicknesses including ultra-thin 6 nm BOX, which was not detected by the AC conductance method, using the four-terminal gate resistance technique. We clarify that the SHE in bulk MOSFETs originates from the degradation of thermal conductivity in a heavily doped well region. The strong chip-temperature dependence of the SHE was observed only in bulk MOSFETs. As results of the chip temperature-dependent SHE of bulk devices and the SHE suppression by BOX thinning, the device temperature of ultrathin BOX SOI MOSFETs is close to that of bulk MOSFETs at an elevated chip temperature, which suggests the thermal advantage of extremely thin BOX structures.

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Section: Introductionmentioning

confidence: 99%

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

Takahashi

Matsuki

Shinada

et al. 2016

IEEE J. Electron Devices Soc.

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“…Therefore, it is important to quantitatively characterize SHE and its impact of device reliability behaviors. Various techniques have been developed to evaluate the SHE, including quasi-DC, small-signal radio frequency (RF), heat sensor in layout, optical methods [3], [4], [18]- [20]. However, the experimental study of the real impact of SHE in the circuit operation case is still very limited.…”

Section: Figure 2 Trend Of She Related Factors In Further Advanced Nodes (A)mentioning

confidence: 99%

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Zhao

2019

IEEE J. Electron Devices Soc.

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FinFET and fully depleted silicon-on-insulator (FDSOI) structures could further improve transistor's performance and, however, also introduce some new problems, especially the increasingly severer self-heating effect (SHE). In this paper, by utilizing the ultra-fast sub-1 ns measurement technique, I-V characteristics of FinFETs and FDSOI devices at different switch speeds are obtained. Furthermore, dynamic SHE phenomena as well as the time-resolved channel temperature change during transistor's switch on and off are able to be experimentally observed. And, more accurate device parameters like ballistic transport efficiency are extracted by the ultra-fast measurements. Moreover, it is experimentally confirmed that several nanoseconds are required to heat up the channel of transistors by the direct electrical characterization and, therefore, in sub-10 nm devices, SHE might be alleviated under high frequency/speed operations.

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“…Few measurement techniques are available for assessing self-heating induced T or T induced drive current reduction and many simulation efforts of this effect lack experimental support. Moreover, these classical measurement techniques convolute the self-heating effects (SHE) measurement with other device degradation mechanisms such as bias temperature instabilities (BTI), hot carrier degradation (HC) and dielectric breakdown (BD) [13][14][15][16].…”

Section: Imec Heater-sensor Measurement Technique and Multiscale Modementioning

confidence: 99%

Self-Heating Effects in Silicon Nanoscale Mosfet(a Multiscale Modeling Approach)

Raleva¹

2018

JEEIT

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Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV

Cited by 30 publications

References 6 publications

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Self-Heating Effects in Silicon Nanoscale Mosfet(a Multiscale Modeling Approach)

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