Experimental study of the impact of optical confinement on saturation effects in SOA

Brenot, R.; Pommereau, F.; Gouezigou, O. Le; Landreau, J.; Poingt, F.; Gouézigou, L. Le; Rousseau, B.; Lelarge, F.; Martin, F.; Duan, Guang‐Hua

doi:10.1109/ofc.2005.192541

Cited by 17 publications

(14 citation statements)

References 3 publications

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“…An improvement in NF of between 0.5 and 2:5 dB for a fiberto-fiber NF of 11 dB is reported using a holding beam technique [4]. Another work has analyzed the effect of reducing the confinement factor on the noise properties of SOAs [5], with reported reductions of ∼1:5 dB when reducing the confinement factor for components of equal active volume. Increased saturation powers have been investigated using a single electrode device with varying contact resistance along the device length [6].…”

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confidence: 99%

Impact of bias current distribution on the noise figure and power saturation of a multicontact semiconductor optical amplifier

et al. 2011

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We present an experimental investigation of a multicontact semiconductor optical amplifier. This first-generation device allows for direct control of the carrier density profile along the length of the waveguide. This is used to control the device noise figure, with a minimum value of 5 dB observed at a gain of 15 dB for an optimum carrier density profile. The opposite carrier density profile results in an increase of the power saturation by 3 dB.

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confidence: 99%

Impact of bias current distribution on the noise figure and power saturation of a multicontact semiconductor optical amplifier

et al. 2011

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“…High means more ASE and more saturation. Thus a low confinement factor induces lower spontaneous emission power by reducing the effect of the ASE inside the device (Brenot et al, 2005). As the RSOA is less saturated, the single pass gain is also increasing with the reduced confinement factor (because the LSHB is reduced).We demonstrated that RSOA devices have a non-uniform carrier density along the active zone.…”

Section: Influence Of the Optical Confinementmentioning

confidence: 84%

Next Generation of Optical Access Network Based on Reflective-SOA

Valicourt¹

2012

Selected Topics on Optical Amplifiers in Present Scenario

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“…It was showed that with a low confinement factor a reduction of the NF could be perceived. The results achieved are encouraging, but the NF of this device is still not as comparable to that of an EDFA [4]. Some laboratories have considered a chain of amplifiers, with a low NF SOA and low gain placed at the input and noisier SOAs with higher gain positioned further down in the amplification scheme.…”

Section: Introductionmentioning

confidence: 99%

Novel design for noise controlled semiconductor optical amplifier

Philippe

Surre

Carney

et al. 2009

2009 11th International Conference on Transparent Optical Networks

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The use of semiconductor optical amplifiers (SOA) in optical communications networks has so far been limited due to their inherent large noise figure (NF) compared to Erbium Doped Fibre Amplifiers. Therefore improvement of the noise performance of SOAs is critical to their widespread adoption in future networks. We propose to reduce the NF of the SOA by introducing a lasing cavity lateral to the axis of amplification of the device. The carrier density within the cavity is clamped at the lasing threshold. It is thus possible to engineer the carrier density distribution along the active waveguide by controlling the cavity design. According to our simulations, some of the cavity designs lead to a reduction of the noise figure in this novel SOA.

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Experimental study of the impact of optical confinement on saturation effects in SOA

Cited by 17 publications

References 3 publications

Impact of bias current distribution on the noise figure and power saturation of a multicontact semiconductor optical amplifier

Impact of bias current distribution on the noise figure and power saturation of a multicontact semiconductor optical amplifier

Next Generation of Optical Access Network Based on Reflective-SOA

Novel design for noise controlled semiconductor optical amplifier

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