2022
DOI: 10.1021/acsomega.2c01384
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Experimental Study of the Influence of CH4 and H2 on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

Abstract: Silicon carbide (SiC) has become an extraordinary photonic material. Achieving reproducible self-formation of silicon quantum dots (SiQDs) within SiC matrices could be beneficial for producing electroluminescent devices operating at high power, high temperatures, or high voltages. In this work, we use a remote plasma-enhanced chemical vapor deposition system to grow SiC thin films. We identified that a particular combination of 20 sccm of CH 4 and a range of 58–100 sccm of H … Show more

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Cited by 3 publications
(2 citation statements)
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“…According with Kargozar et al [9] the QDs are classified in 12 types depending on the elements involved in its formation, but only several types such as CdSeS, CdTe/ZnTe, CdTe, InP/ZnS, CdSe/ZnS, CdSe, and CdS, are currently available commercially. Hydrogenated SiC quantum dots (SiC‐QD's) have been extensively studied for their exceptional electronic properties due to their high luminescent properties and potential applications in bio‐imaging, drug delivery, dental implants, besides possessing high biocompatibility and can be applied for biological cell imaging [10–14]. Many theoretical and experimental studies have focused on studying the surface functionalization with different diameters of SiC‐QD's.…”
Section: Introductionmentioning
confidence: 99%
“…According with Kargozar et al [9] the QDs are classified in 12 types depending on the elements involved in its formation, but only several types such as CdSeS, CdTe/ZnTe, CdTe, InP/ZnS, CdSe/ZnS, CdSe, and CdS, are currently available commercially. Hydrogenated SiC quantum dots (SiC‐QD's) have been extensively studied for their exceptional electronic properties due to their high luminescent properties and potential applications in bio‐imaging, drug delivery, dental implants, besides possessing high biocompatibility and can be applied for biological cell imaging [10–14]. Many theoretical and experimental studies have focused on studying the surface functionalization with different diameters of SiC‐QD's.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, a high H 2 -dilution in the plasma is commonly used for attaining crystallinity in the doped matrix at a low temperature, which inevitably reduces the growth rate. To retain the growth rate, sometimes SiH 4 has been diluted by the noble gases e.g., Ar, He, etc., and the crystallinity is sustained using their excited states in the plasma. However, when used in higher dilutions, the larger atomic dimension of the noble gases compared to H imparts additional structural disorders in the Si network. , Accordingly, a combination of H 2 and noble gas is frequently used. The novelty in the present work lies in developing the P-doped nc-Si thin films of significant crystallinity at a low substrate temperature (∼250 °C) and without supplementary H 2 -dilution of the precursor gas in an inductively coupled plasma (ICP) CVD system. The characteristic high atomic-H density in the low-pressure ICP plasma of SiH 4 induces the electrically active phosphorous donor ions at the c-Si lattice sites to incur higher doping efficiency .…”
Section: Introductionmentioning
confidence: 99%