Experimental study of the n-silicon/acetonitrile interface: Fermi level pinning and surface states investigation

Chazalviel, J.‐N.; Truong, T. B.

doi:10.1021/ja00415a008

Cited by 45 publications

(29 citation statements)

References 4 publications

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“…Such a diode-like rectifying behaviour observed at both Table 1 Differential capacitance-potential properties of different alkyl modified p-type Si(1 1 1) surfaces in CH 3 CN + 0.1 M Bu 4 NClO 4 , in the dark. uncoated and coated electrodes is characteristic of semiconducting surfaces and has been previously reported for n-type Si(1 1 1)/ CH 3 CN interfaces in the presence of various redox couples [12,15,43]. It must be noticed that only the voltammogram of the Si(1 1 1)-H surface shows a well-resolved diffusion-limited anodic peak at 0.47 V while no such peak is observable at modified electrodes within the investigated potential range due to a reduced interfacial kinetics.…”

Section: Determination Of the Energy Diagram Of The Interfacementioning

confidence: 56%

Electrochemical transfer at p-type silicon(111)-alkyl monolayer hybrid electrodes in acetonitrile medium

Fabre

Hauquier

Allongue

2009

Journal of Electroanalytical Chemistry

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Section: Determination Of the Energy Diagram Of The Interfacementioning

confidence: 56%

Electrochemical transfer at p-type silicon(111)-alkyl monolayer hybrid electrodes in acetonitrile medium

Fabre

Hauquier

Allongue

2009

Journal of Electroanalytical Chemistry

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“…The corresponding energy band position, however, is negatively shifted with respect to the band diagram deduced for n-Si in the same CH 3 CN/TBAP electrolyte [28]. The influence of surface states in the determination of E fb accounting for the spreading of the measured values cannot be discarded.…”

Section: Electrochemistry: Fresh Samplesmentioning

confidence: 84%

XPS and electrochemical studies of ferrocene derivatives anchored on n- and p-Si(100) by Si–O or Si–C bonds

Dalchiele¹,

Aurora

Bernardini

et al. 2005

Journal of Electroanalytical Chemistry

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“…Third, the role of surface states in the electron transfer process should be addressed. Fourth, the relative contributions of thermionic emission-diffusion over a Schottky barrier and quantum mechanical tunneling should be assessed (27).…”

Section: Discussionmentioning

confidence: 99%

The Effects of Surface Energetics on the Cyclic Voltammetry of Metallocenes at Nonilluminated n ‐ InP Electrodes

Koval

Austermann

1985

J. Electrochem. Soc.

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Electron transfer processes at n-type InP electrodes of moderate to low doping density were investigated by monitoring the cyclic voltammetric dark currents of a series of metallocenes in acetonitrile solutions. The formal reduction. potentials of the metallocenes span the bandgap of InP, allowing a comparison of the cyclic voltammetric response as a function of the formal reduction potential and the energetic condition of the electrode surface. The energetic condition of the electrode surface during the cyclic voltammetry experiments was monitored by measurements of the capacitance of the space charge region. A simple chemical etching and electrochemical cycling procedure yielded reproducible surface energetics. The n-InP/acetonitrile interface in the depletion condition responded ideally to changes in electrode potential, as evidenced by linear Mott-Schottky plots, over a range of about 0.9V. It was possible to achieve an accumulation condition at negative potentials, but the interface could not be inverted at positive potentials. The n-InP/acetonitrile interface is less susceptible to surface oxidation than is the p-InP/acetonitrile interface. For each metallocene + 1/0 couple, the reversibility of cyclic voltammetric (CV) waves at n-InP was dependent on the doping density of the electrode (ND) and the proximity of the formal reduction potential (E ~ to the conduction bandedge (EcB). Couples with E ~ located negative of EcB displayed nearly reversible CV waves. Couples with E ~ located in the bandgap were reduced irreversibly at overvoltages of 400-500 mV. A couple with E ~ located slightly positive of EcB yielded a partially reversible CV wave at moderate ND, but the wave became irreversible at low ND. Oxidation of couples with E ~ positive of -0.5V vs. E ~ for ferricenium/ferrocene was not observed.The kinetics of electron transfer processes at semiconductor electrode/solution interfaces have not received as much attention experimentally as redox processes at metal electrode/solution interfaces (1-13). We have previously reported our investigation of electron transfer processes at p-InP electrodes in acetonitrile solutions (1). Herein, we extend our study to electron transfer processes at the n-InP/acetonitrile interface.The purpose of this study is to investigate the ways that heterogeneous charge transfer kinetics at semiconductor electrodes are affected by various combinations of the formal reduction potentials of solution species and the energetic condition of the electrode surface. Our approach has been to measure cyclic voltammetric dark currents in acetonitrile solutions for ferricenium § cobalticenium +, and a number of their derivatives (Fig. 1) at n-InP electrodes of moderate to low doping density. Abbreviated designations and formal reduction potentials, E ~ for the metallocenes are listed in Table I. The reasons behind our choices of InP as the electrode material and the series of metallocenes as solution redox probes have been discussed before (1).The specific knowledge of the energetics of the ...

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Experimental study of the n-silicon/acetonitrile interface: Fermi level pinning and surface states investigation

Cited by 45 publications

References 4 publications

Electrochemical transfer at p-type silicon(111)-alkyl monolayer hybrid electrodes in acetonitrile medium

Electrochemical transfer at p-type silicon(111)-alkyl monolayer hybrid electrodes in acetonitrile medium

XPS and electrochemical studies of ferrocene derivatives anchored on n- and p-Si(100) by Si–O or Si–C bonds

The Effects of Surface Energetics on the Cyclic Voltammetry of Metallocenes at Nonilluminated n ‐ InP Electrodes

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