2005
DOI: 10.1016/j.jelechem.2005.02.002
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XPS and electrochemical studies of ferrocene derivatives anchored on n- and p-Si(100) by Si–O or Si–C bonds

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Cited by 99 publications
(112 citation statements)
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“…The general mechanism of these reactions involves the double bond addition to the Si-H surface, 9 where double bond homolytic cleavage is achieved by reaction with peroxides, 10 by UV irradiation, 11 by thermal activation, 12 by electrochemical processes, 13,14 or more recently, by white light irradiation. [15][16][17][18] The union of electroactive molecules on the silicon surface opens a new route for the making of hybrid devices, in which the properties of current silicon technology are combined with those of the molecules own. In the case of silicon, these hybrid components are ideal for Modification of Silicon Surface with Redox Molecules Derived from Ferrocene J. Braz.…”
mentioning
confidence: 99%
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“…The general mechanism of these reactions involves the double bond addition to the Si-H surface, 9 where double bond homolytic cleavage is achieved by reaction with peroxides, 10 by UV irradiation, 11 by thermal activation, 12 by electrochemical processes, 13,14 or more recently, by white light irradiation. [15][16][17][18] The union of electroactive molecules on the silicon surface opens a new route for the making of hybrid devices, in which the properties of current silicon technology are combined with those of the molecules own. In the case of silicon, these hybrid components are ideal for Modification of Silicon Surface with Redox Molecules Derived from Ferrocene J. Braz.…”
mentioning
confidence: 99%
“…Commercially available ferrocene precursors as those used by Decker and co-workers, [15][16][17] and Li and co-workers [19][20][21] are scarce, limiting the number of the studied systems. A different route is followed by Fabre and Hauquier 22 who attach an amine-substituted ferrocene derivative to a pre-assembled acid-terminated alkyl monolayer through several chemical steps.…”
mentioning
confidence: 99%
“…It is now possible to form monolayers with various linking groups, including SiÀC, SiÀO, and SiÀN. [14][15][16] Among them, the formation of SiÀC-bound organic layers through hydrosilylation on the hydrogen-terminated silicon (henceforth referred to as Si À H) substrate has been the most intensively studied. The Si À C bond can be formed with or without radical initiators through thermal treatment, [17,18] photochemical methods, [19,20] or utilizing Lewis acid catalysts.…”
Section: Si à C-bound Organic Monolayers and Their Functionalizationmentioning
confidence: 99%
“…To date most of the research effort has been toward the preparation of either ferrocene-or phorphyrin-based redox architectures [7][8][9][10][11][12][13]. While on the one hand modular (i.e.…”
Section: Introductionmentioning
confidence: 99%