Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Kadotani, Naotoshi; Ohashi, T.; Takahashi, Tetsuo; Oda, Shunri; Uchida, Ken

doi:10.7567/jjap.50.094101

Cited by 7 publications

(1 citation statement)

References 12 publications

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“…Thus, with N d =5×10 18 cm −3 and L g scaling down from 1 μm down to 80 nm, μ acc degrades from 216 cm 2 V −1 s −1 to 140 cm 2 V −1 s −1 . The extracted μ bulk provide good agreement with experimental data [11] and the same is shown in figure 4(c), whereas the experimental mobility values reported for AM MOSFET with N d =10 17 cm −3 and 10 18 cm −3 is 700 cm 2 V −1 s −1 [34] and 250 cm 2 V −1 s −1 [11] respectively. It can be seen from figure 4(c) that the difference in the extracted μ bulk and experimental is visible at N d =2×10 19 cm −3 .…”

Section: Mobility Extractionsupporting

confidence: 86%

Extraction of mobility and Degradation coefficients in double gate junctionless transistors

Bhuvaneshwari

Kranti

2017

Semicond. Sci. Technol.

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In this work, we use the modified McLarty function to understand and extract accumulation (μ acc ) and bulk (μ bulk ) mobility in Double Gate (DG) Junctionless (JL) MOSFETs over a wide range of doping concentration (N d ) and temperature range (250 K to 520 K). The approach enables the estimation of mobility and its attenuation factors (θ 1 and θ 2 ) by a single method. The extracted results indicate that μ acc can reach higher values than μ bulk due to the screening effect. Results also show that θ 2 extracted in the accumulation regime of JL transistors exhibit relatively low values in comparison to inversion and accumulation mode devices. It is shown that the attenuation factor (θ 1 ) in JL devices designed with higher N d (10 19 cm −3 ) is mainly affected by series resistance (R sd ) whereas, in inversion mode (IM) and Accumulation mode (AM) devices, θ 1 factor is governed by both the intrinsic mobility reduction factor (θ 10 ) and R sd . Additionally, the impact of variation in oxide thickness (T ox ), gate length (L g ), N d and temperature on θ 1 and θ 2 has been investigated for JL transistor. The weak dependence of μ bulk and μ acc on temperature shows the prevalence of coulomb scattering over phonon scattering for heavily doped JL transistors. The work provides insights into different modes of operation, extraction of mobility and attenuation factors which will be useful for the development of compact models for JL transistors.

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Section: Mobility Extractionsupporting

confidence: 86%