Solution-processed
chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe)
solar modules are promising alternatives to conventional crystalline
silicon-based photovoltaic devices owing to their potential to lower
production costs and compatibility with large-area flexible substrates.
However, these modules typically exhibit a higher-than-expected cell-to-module
loss, which, in most cases, is attributed to the emergence of critical
shunt sites. In this study, we investigated the structural shunt defects
induced by delamination of the absorber in alcohol-based solution-processed
CIGSSe solar modules. Characterization with the use of lock-in thermography
indicated that most of the delamination-induced shunt defects emerged
locally near the patterned regions. Furthermore, secondary-ion mass
spectroscopy measurements showed that, rather than being uniformly
distributed, the alkali elements in the CIGSSe modules were concentrated
near the patterned regions. The results revealed that the uniformity
of this distribution is the key driving force behind absorber delamination.
Finally, we confirmed that delamination-induced shunt defects can
be alleviated by controlling the diffusion of alkali elements. Consequently,
the energy conversion efficiency of the alcohol-based solution-processed
CIGSSe solar modules was enhanced from 4.24 to 7.59% by introducing
a layer that acts as a thin-film diffusion barrier.