Experimental study on proximity effects in high voltage e-beam lithography

Boere, E.; Drift, E. van der; Romijn, Joost; Rousseeuw, B. A. C.

doi:10.1016/0167-9317(90)90128-g

Cited by 9 publications

(6 citation statements)

References 7 publications

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“…Ultimately, the double Gaussian PEF is normalized and plotted in Figure c. By examining the log–log plot in Figure c, it can be observed that the backscattering is several orders of magnitude larger in range and is comparable to the experimental and fitted values reported in the literature for Si substrate and an E-beam potential of 100 kV (Tables S1 and S2, Supporting Information). − In general, backscattering extends over a longer range for higher E-beam acceleration voltages for the same substrate …”

Section: Resultssupporting

confidence: 65%

Direct Color Printing with an Electron Beam

Rezaei

Wang

et al. 2020

Nano Lett.

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The direct patterning of colors using the bombardment of a focused beam of electrons onto a thin-film stack consisting of poly(methyl methacrylate) coated with a thin nickel film is demonstrated. This direct electron-beam color printing approach creates variations in the height of a Fabry−Perot (FP) cavity, resulting directly in a color print without the need for prepatterned substrates, distinct from some direct laser writing methods. Notably, the resolution of the color prints is defined by the electron beam. Height measurements with ∼5 nm accuracy through color image analysis of an electron-beam-patterned FP cavity were carried out. This technique also introduces a reflectance-based measurement of the point exposure function of a focused electron beam, aiding in rapid proximity effect corrections. In addition, the grayscale lithographic nature of this process was used to produce blazed gratings and could enable the fabrication of other 2.5D nanostructures with precise height control.

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Section: Resultssupporting

confidence: 65%

Direct Color Printing with an Electron Beam

Rezaei

Wang

et al. 2020

Nano Lett.

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“…This assertion has been verified in SHIBL experiments by Shi et al [ 42 ] using PMMA resist, the positive tone resist for which the classic EBL proximity effect experiments were conducted [ 20 ]. The method follows that employed for EBL by Stevens et al [ 43 ] and by Boere et al [ 44 ], and involves exposing doughnut-shaped areas with various inner radii, R 1 , and determining the dose required to fully clear their centres (through the proximity effect). In Shi’s work, the PMMA was spun to a thickness of 20 nm and prebaked for 70 s at 180 °C; development was carried out in MIBK/IPA (1:3) for 60 s. For SHIBL, the outer radius of the doughnut was fixed at R 2 = 200 nm while the inner radius was varied in the range from 5 to 125 nm.…”

Section: Reviewmentioning

confidence: 99%

“…Eq. 2 shows the relationship between the exposure dose and the forward scattered and “backscattered” components [ 44 ]:…”

Section: Reviewmentioning

confidence: 99%

Charged particle single nanometre manufacturing

Prewett¹,

Hagen²,

Lenk³

et al. 2018

Beilstein J. Nanotechnol.

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Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

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“…Electrons backscatter from the substrate and can return up to several micrometers away from the beam, adding unintended dose to the resist layer, distorting the pattern. Proximity effect correction (PEC) has been used to balance the dose from direct write and backscattered electrons [13][14][15][16]. The values used in PEC are not fully characterized in literature; therefore, currently, the creation of nanoscale patterns by electron beam lithography is performed iteratively without a robust way of transferring the basic theoretical understanding to a practical implementation.…”

Section: Introductionmentioning

confidence: 99%

“…Achieving an accurate dose is most important for nanometer features because small changes in dose can change the feature size by larger percentages of the total feature size than at the micrometer scale. Backscatter parameters have been measured experimentally for a few materials using different techniques [13][14][15][16] that rely on optical or scanning electron microscope pattern inspection, causing discrepancies in observed parameters of up to 50%.…”

Section: Introductionmentioning

confidence: 99%

The range and intensity of backscattered electrons for use in the creation of high fidelity electron beam lithography patterns

Czaplewski¹,

Holt²,

Ocola³

2013

Nanotechnology

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We present a set of universal curves that predict the range and intensity of backscattered electrons which can be used in conjunction with electron beam lithography to create high fidelity nanoscale patterns. The experimental method combines direct write dose, backscattered dose, and a self-reinforcing pattern geometry to measure the dose provided by backscattered electrons to a nanoscale volume on the substrate surface at various distances from the electron source. Electron beam lithography is used to precisely control the number and position of incident electrons on the surface of the material. Atomic force microscopy is used to measure the height of the negative electron beam lithography resist. Our data shows that the range and the intensity of backscattered electrons can be predicted using the density and the atomic number of any solid material, respectively. The data agrees with two independent Monte Carlo simulations without any fitting parameters. These measurements are the most accurate electron range measurements to date.

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Experimental study on proximity effects in high voltage e-beam lithography

Cited by 9 publications

References 7 publications

Direct Color Printing with an Electron Beam

Direct Color Printing with an Electron Beam

Charged particle single nanometre manufacturing

The range and intensity of backscattered electrons for use in the creation of high fidelity electron beam lithography patterns

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