Experimental Synthesis of Strained Monolayer Silver Arsenide on Ag(111) Substrates*

Abstract

Two-dimensional (2D) materials are playing more and more important roles in both basic sciences and industrial applications. For 2D materials, strain could tune the properties and enlarge applications. Since the growth of 2D materials on substrates is often accompanied by strain, the interaction between 2D materials and substrates is worthy of careful attention. Here we demonstrate the fabrication of strained monolayer silver arsenide (AgAs) on Ag(111) by molecular beam epitaxy, which shows one-dimensional stripe structures arising from uniaxial strain. The atomic geometric structure and electronic band structure are investigated by low energy electron diffraction, scanning tunneling microscopy, x-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and first-principle calculations. Monolayer AgAs synthesized on Ag(111) provides a platform to study the physical properties of strained 2D materials.

Band engineering of honeycomb monolayer CuSe via atomic modification*

“…Since the growth of 2D materials on substrates is often accompanied by strain, [35,36] we further investigate the atomic and electronic properties of monolayer CuHSe and CuLiSe with different strains. The biaxial strain is applied via changing the lattice parameters of the monolayers and then fully relaxing the atomic positions.…”

A novel two-dimensional SiO sheet with high-stability, strain tunable electronic structure, and excellent mechanical properties*

“…Strain is an effective method to control the electronic properties of 2D materials. [34][35][36][37][38][39] In order to further study the regulation of strain on the 2D P2, we conduct a study on the regulation of strain on electronic properties. Firstly, we conduct a study on the adjustment of the electronic properties of the 2D structure by uniaxial strain along the a direction, as shown in Fig.…”

Edge- and strain-induced band bending in bilayer-monolayer Pb2Se3 heterostructures*

“…[1][2][3][4] The traditional 2D semiconductors that derived from layered bulk materials such as WS 2 and MoS 2 have seen a huge advancement in electronics and optoelectronics using all 2D materials. [5][6][7][8][9][10] Furthermore, layer-dependent band engineering and construction of lateral heterostructures based on 2D materials with different thickness create new possibilities for device applications. [11][12][13][14] However, the further development in the field requires the continual investigation of 2D materials systems beyond those that are well known.…”