2011
DOI: 10.1109/lpt.2011.2117414
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Experimental Validation of a Reflective Semiconductor Optical Amplifier Model Used as a Modulator in Radio Over Fiber Systems

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Cited by 35 publications
(16 citation statements)
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“…The employed RSOA is a 800 µm long device with a far-facet reflectivity of 10% driven at a constant bias current of 190 mA [8]. The experimental setup and simulation framework are shown in Figs.…”
Section: Numerical Modeling Of Rsoasmentioning
confidence: 99%
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“…The employed RSOA is a 800 µm long device with a far-facet reflectivity of 10% driven at a constant bias current of 190 mA [8]. The experimental setup and simulation framework are shown in Figs.…”
Section: Numerical Modeling Of Rsoasmentioning
confidence: 99%
“…The spatially resolved simulations modeled both counter-propagating waves within the RSOA, and regarded dynamic carrier injection [8,9]. The modeling framework for the RSOA is similar to that of single-pass SOAs with the appropriate boundary conditions applied at the reflective facet.…”
Section: Numerical Modeling Of Rsoasmentioning
confidence: 99%
See 2 more Smart Citations
“…A time domain model for reflective semiconductor optical amplifiers (RSOAs) was developed based on the carrier rate and wave propagation equations. The non linear gain saturation and the amplified spontaneous emission have been considered and implemented together in a current injected RSOA model (Liu et al, 2011). This approach follows the same analytical formalism as Connelly's static model (Connelly, 2007).…”
Section: Fundamentals Of Soa and Rsoamentioning
confidence: 99%