Experiments of a Lateral Power Device With Complementary Homogenization Field Structure

Zhang, Wentong; Wu, Yang; Zhang, Ke; Qiao, Ming; Zhang, Sen; He, Nailong; Li, Zhaoji; Zhang, Bo

doi:10.1109/led.2021.3115134

Cited by 7 publications

(4 citation statements)

References 20 publications

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“…Design formula (3) provides a very simple guideline for the HOF devices, where improving device characteristics can be achieved by simply increasing the junction and trench depths in the drift region. Compared with our previous work [14], the trench depth is increased from 12 μm to 15 μm and the corresponding DN is increased from 6.8 × 10 12 cm −2 to 8 × 10 12 cm −2 . Based on the CSD mechanism, it is possible to achieve a predictable decrease in Ron,sp while maintaining a constant VB.…”

Section: Design Of Csd Hof Ldmoscontrasting

confidence: 76%

“…Fig. 8 Ron,sp-VB characteristics of the CSD HOF LDMOS and reported experiments [3]- [8], [14]- [15]. The CSD HOF LDMOS realizes a Ron,sp reduced by 20.8% when compared with the HOF LDMOS we reported in [14].…”

Section: 8%mentioning

confidence: 60%

“…6 presents the micro photo and layout of the drift region for the CSD HOF LDMOS, featuring the introduction of 7 trench arrays in the drift region. In comparison to the device in [14], the HOF device designed using the CSD mechanism incorporates 15 μm deeper trenches to deplete a higher DN of 8 × 10 12 cm −2 .…”

Section: Experiments Of Csd Hof Ldmosmentioning

confidence: 99%

“…Recently, a new type of homogenization field (HOF) devices have been reported [12]- [14]. The HOF devices feature periodic MIS structures in the drift region to fully deplete the highly doped N-type region.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Novel Constant Surface Concentration Depletion Mechanism and Its Experiments in Homogenization field LDMOS

Zhang,

Cai,

et al. 2023

ISPS'23 Proceedings

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A novel constant surface concentration depletion (CSD) mechanism for the homogenization field (HOF) LDMOS is proposed and experimentally demonstrated in this paper. Because the depletion of the HOF LDMOS is independent on the P-substrate, the surface doping concentration of the HOF LDMOS can keep constant and thus the total doping dose of the N-drift region can increase with the junction and trench depths. Based on the CSD mechanism, a CSD HOF LDMOS with 15 μm trench depth was designed and experimentally fabricated. The doping dose of the N-drift region is increased up to 8 × 1012 cm-2. As a results, a measured low specific on-resistance Ron,sp of 15.6 mΩ·cm2 was observed under a breakdown voltage VB of 420 V, realizing a high figure of merit FOM = VB2 / Ron,sp of 11.3 MW/cm2 and a reduction of 53.3% compared with the theoretical limit of the triple RESURF technology under the same VB. Ron,sp of the CSD HOF LDMOS also realizes a reduction of 20.8% when compared with that of the best-in-class HOF LDMOS.

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Section: Design Of Csd Hof Ldmoscontrasting

confidence: 76%

Section: 8%mentioning

confidence: 60%

Section: Experiments Of Csd Hof Ldmosmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Novel Constant Surface Concentration Depletion Mechanism and Its Experiments in Homogenization field LDMOS

Zhang,

Cai,

et al. 2023

ISPS'23 Proceedings

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Recent developments in superjunction power devices

Ma,

Chen,

Liu

et al. 2024

J. Semicond.

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Superjunction (SJ) is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a "milestone" in power MOS. Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V B in conventional devices. This results in a reduction of the trade-off relationship between specific on-resistance R on,sp and V B from the conventional R on,sp∝V B 2.5 to R on,sp∝W∙V B 1.32, and even to R on,sp∝W·V B 1.03. As the exponential term coefficient decreases, R on,sp decreases with the cell width W, exhibiting a development pattern reminiscent of "Moore’s Law". This paper provides an overview of the latest research developments in SJ power semiconductor devices. Firstly, it introduces the minimum specific on-resistance R on,min theory of SJ devices, along with its combination with special effects like 3-D depletion and tunneling, discussing the development of R on,min theory in the wide bandgap SJ field. Subsequently, it discusses the latest advancements in silicon-based and wide bandgap SJ power devices. Finally, it introduces the homogenization field (HOF) and high-K voltage-sustaining layers derived from the concept of SJ charge balance. SJ has made significant progress in device performance, reliability, and integration, and in the future, it will continue to evolve through deeper integration with different materials, processes, and packaging technologies, enhancing the overall performance of semiconductor power devices.

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A New Type of Homogenization Field Power Semiconductor Devices

Zhang

2022

2022 IEEE 16th International Conference on Solid-State &Amp; Integrated Circuit Technology (ICSICT)

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Experiments of a Lateral Power Device With Complementary Homogenization Field Structure

Cited by 7 publications

References 20 publications

Novel Constant Surface Concentration Depletion Mechanism and Its Experiments in Homogenization field LDMOS

Novel Constant Surface Concentration Depletion Mechanism and Its Experiments in Homogenization field LDMOS

Recent developments in superjunction power devices

A New Type of Homogenization Field Power Semiconductor Devices

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