Experiments on anisotropic etching of Si in TMAH

You, Jae Sung; Kim, Dong Hwan; Huh, Joo Youl; Park, Ho Joon; Pak, James Jungho; Kang, Choon Sik

doi:10.1016/s0927-0248(00)00156-2

Cited by 77 publications

(38 citation statements)

References 6 publications

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“…Note the thickness of Al over-layer for the carrier lifetime samples was controlled to be thin (< 10 nm) to mimic a contact, whilst still transmitting sufficient light for the photo-conductance measurement.Proof-of-concept cells were fabricated on n-type c-Si wafers with a resistivity of ~0.5 Ω·cm and a thickness of ~230 µm. The as-cut (100)-oriented silicon wafers were subjected to an alkaline solution of TMAH, deionized water, isopropyl alcohol (IPA) and dissolved silicon at a temperature of 85 °C for 60 min, forming textured morphologies with an array of random pyramids [50][51][52][53][54]. After cleaning all samples by the RCA procedure, full-area boron diffusion with sheet resistance of ~120 Ω/□ was then performed in a dedicated clean quartz furnace.…”

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confidence: 99%

Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells

Wan

Samundsett

Bullock

et al. 2016

ACS Appl. Mater. Interfaces

205

187

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In this study, we present a novel application of thin magnesium fluoride films to form electron-selective contacts to n-type crystalline silicon (c-Si). This allows the demonstration of a 20.1%-efficient c-Si solar cell. The electron-selective contact is composed of deposited layers of amorphous silicon (∼6.5 nm), magnesium fluoride (∼1 nm), and aluminum (∼300 nm). X-ray photoelectron spectroscopy reveals a work function of 3.5 eV at the MgF2/Al interface, significantly lower than that of aluminum itself (∼4.2 eV), enabling an Ohmic contact between the aluminum electrode and n-type c-Si. The optimized contact structure exhibits a contact resistivity of ∼76 mΩ·cm(2), sufficiently low for a full-area contact to solar cells, together with a very low contact recombination current density of ∼10 fA/cm(2). We demonstrate that electrodes functionalized with thin magnesium fluoride films significantly improve the performance of silicon solar cells. The novel contacts can potentially be implemented also in organic optoelectronic devices, including photovoltaics, thin film transistors, or light emitting diodes.

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mentioning

confidence: 99%

Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells

Wan

Samundsett

Bullock

et al. 2016

ACS Appl. Mater. Interfaces

205

187

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“…Besides the same 1.0 Ω cm n-type, {100}-oriented wafers used in Section 3.1, lifetime samples for Section 3.2 also includes (i) {111}-oriented planar n-type FZ silicon wafers with a resistivity of 1.0 Ω cm and a thickness of 290 mm, and (ii) textured silicon wafers with random upright pyramids, which were prepared by immersing the as-cut 1.0 Ω cm n-type, {100} samples in an alkaline solution of TMAH, deionized water, isopropyl alcohol (IPA) and dissolved silicon at a temperature of 85°C for 60 min [12][13][14][15][16]. In addition, Section 3.2 also includes planar and random pyramidally textured boron-diffused samples with three different sheet resistances of 56, 122, and 214 Ω/sq.…”

Section: Methodsmentioning

confidence: 99%

Passivation of c-Si surfaces by ALD tantalum oxide capped with PECVD silicon nitride

Wan

Bullock

Cuevas

2015

Solar Energy Materials and Solar Cells

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“…More details about the fabrication process of the textured Si surfaces can be found elsewhere. [34][35][36][37][38][39][40][41][42] 043502-2 Mehrabian et al…”

Section: Modelmentioning

confidence: 99%

The effect of microscopic texture on the direct plasma surface passivation of Si solar cells

Mehrabian

Qaemi

et al. 2013

Physics of Plasmas

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The effect of microscopic texture on the direct plasma surface passivation of Si solar cells AbstractTextured silicon surfaces are widely used in manufacturing of solar cells due to increasing the light absorption probability and also the antireflection properties. However, these Si surfaces have a high density of surface defects that need to be passivated. In this study, the effect of the microscopic surface texture on the plasma surface passivation of solar cells is investigated. The movement of 105Hþ ions in the texture-modified plasma sheath is studied by Monte Carlo numerical simulation. The hydrogen ions are driven by the combined electric field of the plasma sheath and the textured surface. The ion dynamics is simulated, and the relative ion distribution over the textured substrate is presented. This distribution can be used to interpret the quality of the Si dangling bonds saturation and consequently, the direct plasma surface passivation. Textured silicon surfaces are widely used in manufacturing of solar cells due to increasing the light absorption probability and also the antireflection properties. However, these Si surfaces have a high density of surface defects that need to be passivated. In this study, the effect of the microscopic surface texture on the plasma surface passivation of solar cells is investigated. The movement of 10 5 H þ ions in the texture-modified plasma sheath is studied by Monte Carlo numerical simulation. The hydrogen ions are driven by the combined electric field of the plasma sheath and the textured surface. The ion dynamics is simulated, and the relative ion distribution over the textured substrate is presented. This distribution can be used to interpret the quality of the Si dangling bonds saturation and consequently, the direct plasma surface passivation. V C 2013 American Institute of Physics. [http://dx

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Experiments on anisotropic etching of Si in TMAH

Cited by 77 publications

References 6 publications

Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells

Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells

Passivation of c-Si surfaces by ALD tantalum oxide capped with PECVD silicon nitride

The effect of microscopic texture on the direct plasma surface passivation of Si solar cells

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