Explaining the amplitude of RTS noise in submicrometer MOSFETs

Simoen, Eddy; Dierickx, B.; Claeys, Cor; Declerck, G.

doi:10.1109/16.121702

Cited by 135 publications

(76 citation statements)

References 20 publications

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“…(9). The squares are the results from the numerical integration of the term with no analytical solution in the last square root on the right-hand side of (9). The full line is the fitting function g(f H /f L ) for this term (10).…”

Section: Microscopic Statistical Lf Noise Modelingmentioning

confidence: 99%

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Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs

Wirth

Silva

Brederlow

2007

IEEE Trans. Electron Devices

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Section: Microscopic Statistical Lf Noise Modelingmentioning

confidence: 99%

“…Their origin is the capture and subsequent emission of charge carriers at discrete trap levels near the Si−SiO 2 interface [3]- [9]. For deep-submicrometer devices, the number of traps with energy within a few kT close to the surface Fermi level is small [8].…”

mentioning

confidence: 99%

Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs

Wirth

Silva

Brederlow

2007

IEEE Trans. Electron Devices

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“…This well-known phenomenon has been observed and studied since the 1980s [78][79][80][81][82][83][84][85][86], resulting in a prediction for the RTN amplitude [79] equal to…”

Section: Rtn Amplitudementioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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“…Current fluctuations on such a scale will become a serious issue, not only in analogue circuits, but also in mixed-mode [3] and digital applications. Although the RTS in MOSFETs have been studied experimentally for a relatively long period of time, the developed analytical models [5] and simplified numerical simulation studies [6] can not explain the wide range of RTS amplitudes observed in otherwise identical devices [7]. There are suggestions that due to surface potential fluctuations strategically located traps influence the magnitude and the spreading of RTS amplitudes.…”

Section: Introductionmentioning

confidence: 99%

Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

Asenov

Balasubramaniam

Brown

et al.

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.

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Explaining the amplitude of RTS noise in submicrometer MOSFETs

Cited by 135 publications

References 20 publications

Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs

Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

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