Al 2 O 3 atomic layer deposition (ALD), which uses trimethylaluminum (TMA) as the metal precursor, shows promise in improving the environmental stability of hybrid halide perovskites. However, it is not yet entirely clear how TMA, a strong Lewis acid, reacts with fresh perovskites and how the reaction affects the nucleation of ALD Al 2 O 3 . Here, the effects of reaction temperature and partial pressure of TMA on the mechanisms of TMA/CH 3 NH 3 PbI 3 reactions are investigated. Our real time mass gain data and in situ mass spectrometry data show that the TMA/CH 3 NH 3 PbI 3 reaction can either remove mass or accumulate mass onto CH 3 NH 3 PbI 3 substrates, depending strongly on the reaction temperature and partial pressure of TMA. The TMA/CH 3 NH 3 PbI 3 reaction probably generates TMA−CH 3 NHx adduct compounds, which protects CH 3 NH 3 PbI 3 from TMA by forming a shell at 25 °C in the vacuum process. However, these adduct compounds decompose at higher temperatures (e.g., 75 °C). This product layer is much thicker than a monolayer, suggesting the interface formed between Al 2 O 3 coating and CH 3 NH 3 PbI 3 is blurring and messy. These results have not yet, but should be, carefully considered to correctly interpret the effect of ALD Al 2 O 3 treatment on optoelectronic properties of CH 3 NH 3 PbI 3 .