Exploration work function and optical properties of monolayer SnSe allotropes

Cui, Zhen; Wang, Xia; Ding, Yingchun; Li, Meiqin

doi:10.1016/j.spmi.2017.12.039

Cited by 62 publications

(26 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In fact, SnSe monolayers have been paid significant attentions in recent years, derived from their relative high stability, considerable quantum confinement effect, and high potentials in applying to flexible thermoelectric generators. [3,341,[345][346][347][348][349] Computational works based on DFT indicated that the monolayer is dynamically and thermally stable with a bandgap of 1.28 eV, [341] and the ZTs can reach 3.27/2.76 along the b-and c-directions with optimal n at 700 K due to quantum confinement effect. [341] Other works based on the Boltzmann transport equation also indicated that SnSe monolayer can exhibit high thermoelectric conversion efficiency in p-type doping, derived from its high S 2 σ and low κ.…”

Section: Quantum Wallmentioning

confidence: 99%

“…Figure 18c shows a TEM image of SnSe monolayer,338,341,342 the inset AFM image indicates that the thickness of monolayer is only ≈0.68 nm, which is close to the theoretical value of single‐layer SnSe (≈5.749 Å). In fact, SnSe monolayers have been paid significant attentions in recent years, derived from their relative high stability, considerable quantum confinement effect, and high potentials in applying to flexible thermoelectric generators 3,341,345–349. Computational works based on DFT indicated that the monolayer is dynamically and thermally stable with a bandgap of 1.28 eV,341 and the ZTs can reach 3.27/2.76 along the b ‐ and c ‐ directions with optimal n at 700 K due to quantum confinement effect 341.…”

Section: Flexible Generatormentioning

confidence: 99%

See 1 more Smart Citation

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

2020

View full text Add to dashboard Cite

Tin selenide (SnSe) is one of the most promising candidates to realize environmentally friendly, cost‐effective, and high‐performance thermoelectrics, derived from its outstanding electrical transport properties by appropriate bandgaps and intrinsic low lattice thermal conductivity from its anharmonic layered structure. Advanced aqueous synthesis possesses various unique advantages including convenient morphology control, exceptional high doping solubility, and distinctive vacancy engineering. Considering that there is an urgent demand for a comprehensive survey on the aqueous synthesis technique applied to thermoelectric SnSe, herein, a thorough overview of aqueous synthesis, characterization, and thermoelectric performance in SnSe is provided. New insights into the aqueous synthesis‐based strategies for improving the performance are provided, including vacancy synergy, crystallization design, solubility breakthrough, and local lattice imperfection engineering, and an attempt to build the inherent links between the aqueous synthesis‐induced structural characteristics and the excellent thermoelectric performance is presented. Furthermore, the significant advantages and potentials of an aqueous synthesis route for fabricating SnSe‐based 2D thermoelectric generators, including nanorods, nanobelts, and nanosheets, are also discussed. Finally, the controversy, strategy, and outlook toward future enhancement of SnSe‐based thermoelectric materials are also provided. This Review guides the design of thermoelectric SnSe with high performance and provides new perspectives as a reference for other thermoelectric systems.

show abstract

Section: Quantum Wallmentioning

confidence: 99%

Section: Flexible Generatormentioning

confidence: 99%

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

2020

View full text Add to dashboard Cite

show abstract

“…3(b). The built-in voltage was calculated as V bi = F M À F S , where F S is the work function of the semiconductor 52 and is 3.94 eV.…”

Section: Resultsmentioning

confidence: 99%

Photosensitive Schottky barrier diodes based on Cu/p-SnSe thin films fabricated by thermal evaporation

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Accordingly, the values of VBO decreased from 0.51 to 0.24 eV as the PbSe layer thickness increases from 3 to 10 u.c., as shown in Figure 4b. With the bandgap of 0.27 and 1.0 eV for PbSe and SnSe [38,39]…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh Power Factor and Ultralow Thermal Conductivity at Room Temperature in PbSe/SnSe Superlattice: Role of Quantum‐Well Effect

Zuo-ning

Ning

Jia

et al. 2021

Small

View full text Add to dashboard Cite

As experimentally shown by Hicks and Dresselhaus [16] the value of S is about 2.5 times than that of the bulk through quantum confinement effects by using QW structures. In 2007, Ohta et al. [17] observed a large Seebeck coefficient S = 850 µV K −1 in SrTiO 3 (barrier)/ SrTi 0.8 Nb 0.2 O 3 (well)/SrTiO 3 (barrier) multiple QW (MQW). By analyzing the optical spectra, Choi et al. found that the polaron plays an important role in determining the electronic structure in this MQW. [18] Through orbital reconstruction, recently Geisler et al. [19] also obtained large positive S (≈135 µV K −1 ) in LaNiO 3 /SrTiO 3 MQW at room temperature. As a matter of fact, for oxide or semiconductor MQW structure, the carrier electrons should be confined inside of a thin conducting layer. [16,17] There is valid argument for the attention that this will modified the electronic structure near Fermi level through polaron dimensional effect or quantum confinement effect. [18,20] In addition to high S, another strongly desired characteristic for TE materials is electrical and thermal conductivity, which will allow us to explore the high figures of merit. Venkatasubramanian et al. [21] reported that figure of merit can be further increased by controlling the transport of electrons in Bi 2 Te 3 / Sb 2 Te 3 superlattices. In addition, recently theoretical analyses for WS 2 /WSe 2 suplattices suggest that the ZT values can be enhanced by optimal the thermal conductivity. [22,23] However, for the earlier work of the semiconductor QW structure, the band offset is small and which most likely minimal the anisotropy between in-plane and out-of-plane electrical conductivities. [21,[24][25][26] Under this circumstance, due to the electron tunneling and thermal currents between the layers with these infinite potential barriers heights, the enhancement of the ZT values are rather moderate. On the other hand, for the oxide QW, although the tunneling effect are disappeared, but the thermal conductivity are 1-2 orders of magnitude higher than the semiconductor, [27,28] which limits their application in thermoelectric device.In this paper, we select the PbSe and SnSe as the constituent materials for the MQW structure to enhance Seebeck coefficient and optimal thermoelectric properties. PbSe has excellent thermoelectric properties in the mid-temperature region, along with low lattice thermal conductivity and small forbidden band width (≈0.28 eV). In this heterojunction system, SnSe was chosen as the potential barrier layer because on the one Reduced dimension is one of the effective strategies to modulate thermoelectric properties. In this work, n-type PbSe/SnSe superlattices with quantum-well (QW) structure are fabricated by pulsed laser deposition. Here, it is demonstrated that the PbSe/SnSe multiple QW (MQW) shows a high power factor of ≈25.7 µW cm −1 K −2 at 300 K, four times larger than that of PbSe single layers. In addition, thermal conductivity falls below 0.32 ± 0.06 W m −1 K −1 due to the phonon scattering at interface when the PbSe well thickness...

show abstract

Exploration work function and optical properties of monolayer SnSe allotropes

Cited by 62 publications

References 43 publications

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

Photosensitive Schottky barrier diodes based on Cu/p-SnSe thin films fabricated by thermal evaporation

Ultrahigh Power Factor and Ultralow Thermal Conductivity at Room Temperature in PbSe/SnSe Superlattice: Role of Quantum‐Well Effect

Contact Info

Product

Resources

About