Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

Ávila, J.; Razado, I. C.; Lorcy, Stephane; Fleurier, Romain; Pichonat, E.; Vignaud, D.; Wallart, X.; Asensio, M. C.

doi:10.1038/srep02439

Cited by 89 publications

(108 citation statements)

References 47 publications

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“…We checked that the physics of the graphene low energy states does not change upon increasing the number of layers. In addition, we found good agreement of the band structure with experiment [8][9][10][11][12][13][14].…”

Section: A Choice Of Unit Cellsupporting

confidence: 66%

“…STM experiments [4] observe regions with different moiré structures; the most observed one (30%) is a commensurate lattice configuration with a periodicity of 66Å. Another experiment [8] found that 60% of graphene grains on Cu(111) are preferentially rotated by 3…”

Section: A Choice Of Unit Cellmentioning

confidence: 99%

“…The top of the d band edge of copper begins at −2 eV below the Fermi level. It is observed that a gap opens within the Dirac cone of graphene of about 50-180 meV [8,[10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…Experimentally, graphene on the Cu(111) surface has been well studied by means of angle-resolved photoemission spectroscopy (ARPES) [8][9][10][11][12][13][14] and scanning tunneling microscopy (STM) [4]. The linear dispersion of graphene is found to be preserved.…”

Section: Introductionmentioning

confidence: 99%

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Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

2016

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We study orbital and spin-orbit proximity effects in graphene adsorbed to the Cu(111) surface by means of density functional theory (DFT). The proximity effects are caused mainly by the hybridization of graphene π and copper d orbitals. Our electronic structure calculations agree well with the experimentally observed features. We carry out a graphene-Cu(111) distance dependent study to obtain proximity orbital and spin-orbit coupling parameters, by fitting the DFT results to a robust low energy model Hamiltonian. We find a strong distance dependence of the Rashba and intrinsic proximity induced spin-orbit coupling parameters, which are in the meV and hundreds of μeV range, respectively, for experimentally relevant distances. The Dirac spectrum of graphene also exhibits a proximity orbital gap, of about 20 meV. Furthermore, we find a band inversion within the graphene states accompanied by a reordering of spin and pseudospin states, when graphene is pressed towards copper.

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Section: A Choice Of Unit Cellsupporting

confidence: 66%

Section: A Choice Of Unit Cellmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

2016

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“…Angle Resolved Photoelectron Spectroscopy experiments (ARPES) were performed at beamline I4, which covers the energy range 14 to 160 eV. Microand nano-ARPES experiments were carried out at the ANTARES beamline [83,84] at the SOLEIL laboratory in France. This instrument allowed ARPES spectra to be collected from selected micro-or nano-sized areas on the surface, compared to the almost mm-sized probing area obtained at beamline I4.…”

Section: Photoelectron Spectroscopy (Pes)mentioning

confidence: 99%

Characterizations of as grown and functionalized epitaxial grapheneg rown on SiC surfaces

Xia¹

2015

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III AbstractThe superior electronic and mechanical properties of Graphene have promoted graphene to become one of the most promising candidates for next generation of electronic devices. Epitaxial growth of graphene by sublimation of Si from Silicon Carbide (SiC) substrates avoids the hazardous transfer process for large scale fabrication of graphene based electronic devices. Moreover, the operation conditions can potentially be extended to high temperatures, voltages and frequencies. This thesis is focused on characterizations of as grown and functionalized epitaxial graphene grown on both Si-face and C-face SiC. Synchrotron radiation-based techniques are employed for detailed investigations of the electronic properties and surface morphology of as grown and functionalized graphene.Large area and homogeneous monolayer (ML) graphene has been possible to grow on SiC(0001) substrates by sublimation, but efforts to obtain multilayer graphene of similar quality have been in vain. A study of the transport behavior of silicon atoms through carbon layers was therefore performed for the purpose to gain a better understanding of the growth mechanism of graphene on Si-face SiC. It showed that a temperature of about 800°C is required for Si intercalation into the interface to take place. Intercalation of Si was found to occur only via defects and domain boundaries which probably is the reason to the limited growth of multilayer graphene. Annealing at 1000-1100°C induced formation of SiC on the surface and after annealing above 1200°C Si started to de-intercalate and desorb/sublimate. Different alkali metals were found to affect graphene grown in SiC quite differently. Li started to intercalate already at room temperature by creating cracks and defects, while K, Rb and Cs were found unable to intercalate into the graphene/SiC interface. Effects induced by the alkali metal Na on graphene grown on both Si-face and C-face SiC were therefore studies. For the Si-face, partial intercalation of Na through graphene was observed on both 1 ML and 2 ML areas directly after Na deposition. Annealing at a temperature of about 75°C strongly promoted Na intercalation at the interface. The intercalation was confirmed to start at domain boundaries between 1 ML and 2 ML areas and at stripes/streaks on the 1 ML areas. Higher annealing temperature resulted in desorption of Na from the sample surface. Also for C-face graphene, a strong n-type doping was observed directly after Na deposition. Annealing at temperatures from around 120 to 300°C was here found to result in a considerable π-band broadening, interpreted to indicate penetration of Na in between the graphene layers and at the graphene SiC interface.The thermal stability of graphene based electronic devices can depend on the choice of contact material. Studies of the stability and effects induced by two commonly used metals (Pt and Al) on Si-face graphene were carried out after deposition and after subsequent annealing at different temperatures. Both Al and Pt were found to be g...

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Recent Advances in Moiré Superlattice Systems by Angle‐Resolved Photoemission Spectroscopy

Li,

Wan,

2023

Advanced Materials

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The last decade has witnessed a flourish in two‐dimensional (2D) materials including graphene and transition metal dichalcogenides (TMDs) as atomic‐scale Legos. Artificial moiré superlattices via stacking 2D materials with a twist angle and/or a lattice mismatch have recently become a fertile playground exhibiting a plethora of emergent properties beyond their building blocks. These rich quantum phenomena stem from their nontrivial electronic structures that have been effectively tuned by the moiré periodicity. Modern angle‐resolved photoemission spectroscopy (ARPES) can directly visualize electronic structures with decent momentum, energy, and spatial resolution, thus could provide enlightening insights into fundamental physics in moiré superlattice systems and guides for designing novel devices. In this review, firstly a brief introduction is given on advanced ARPES techniques and basic ideas of band structures in a moiré superlattice system. Then ARPES research results of various moiré superlattice systems are highlighted, including graphene on substrates with small lattice mismatches, twisted graphene/TMD moiré systems, and high‐order moiré superlattice systems. Finally, we discuss on important questions that remain open, challenges in current experimental investigations and present an outlook on this field of research.This article is protected by copyright. All rights reserved

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Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

Cited by 89 publications

References 47 publications

Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

Characterizations of as grown and functionalized epitaxial grapheneg rown on SiC surfaces

Recent Advances in Moiré Superlattice Systems by Angle‐Resolved Photoemission Spectroscopy

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