Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods

Giusca, Cristina E.; Spencer, Steve J.; Shard, Alexander G.; Yakimova, Rositza; Kazakova, Olga

doi:10.1016/j.carbon.2013.12.018

Cited by 27 publications

(26 citation statements)

References 50 publications

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“…One class is based on bulk compounds of graphite, which are well-known and diverse; here, the intercalant occupies the galleries between carbon sheets [195][196][197][198]. The other is based on supported graphene [16], where the intercalant is at or near the graphene-support interface, often modifying the electronic properties of the graphene blanket while leaving its structural integrity intact.…”

Section: Intercalation For Supported Graphene Systems and For Graphitementioning

confidence: 99%

Growth morphology and properties of metals on graphene

Liu

Han

Evans

et al. 2015

Progress in Surface Science

146

125

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a b s t r a c tGraphene, a single atomic layer of graphite, has been the focus of recent intensive studies due to its novel electronic and structural properties. Metals grown on graphene also have been of interest because of their potential use as metal contacts in graphene devices, for spintronics applications, and for catalysis. All of these applications require good understanding and control of the metal growth morphology, which in part reflects the strength of the metal-graphene bond. Also of importance is whether the interaction between graphene and metal is sufficiently strong to modify the electronic structure of graphene. In this review, we will discuss recent experimental and computational studies related to deposition of metals on graphene supported on various substrates (SiC, SiO 2 , and hexagonal close-packed metal surfaces). Of specific interest are the metal-graphene interactions (adsorption energies and diffusion barriers of metal adatoms), and the crystal structures and thermal stability of the metal nanoclusters.

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Section: Intercalation For Supported Graphene Systems and For Graphitementioning

confidence: 99%

Growth morphology and properties of metals on graphene

Liu

Han

Evans

et al. 2015

Progress in Surface Science

146

125

View full text Add to dashboard Cite

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“…The surface potential, chemical composition, and morphology of graphene grown on the C face of 4H-SiC have been explored [140]. By matching the same nanoscale features on the surface potential and Raman spectroscopy maps (Figure 29), individual domains and bare SiC substrate have been assigned to graphene patches one to five monolayers thick.…”

Section: Growth Of Graphene On C Facementioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

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“…An important issue is the slight shift of the π * peak toward lower energies in the amorphous region, which could indicate defect states or chemical bonding with other species. Previous studies have claimed the presence of oxygen at the graphene/SiC(0001) system [5,31]. In order to verify this hypothesis, we controlled for an O-K edge signal during EELS acquisition, which showed the presence of a very low oxygen concentration confined within the amorphous region.…”

Section: Chemical Analysis and Electronic Structurementioning

confidence: 99%

Interface disorder probed at the atomic scale for graphene grown on the C face of SiC

et al. 2015

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Interface disorder probed at the atomic scale for graphene grown on the C face of SiC, 2015, Physical Review B. Condensed Matter and Materials Physics, (91) We use aberration-corrected scanning transmission electron microscopy, electron energy-loss spectroscopy, atomic force microscopy, and the density functional theory to study the structural and electronic characteristics of graphene grown on the C face of SiC. We show that for high growth temperatures the graphene/SiC (0001) interface is dominated by a thin amorphous film which strongly suppresses the epitaxy of graphene on the SiC substrate. This film maintains an almost fixed thickness regardless of the number of the overlying graphene layers, while its chemical signature shows the presence of C, Si, and O. Structurally, the amorphous area is inhomogeneous, as its Si concentration gradually decreases while approaching the first graphene layer, which is purely sp 2 hybridized. Ab initio calculations show that the evaporation process and the creation of Si vacancies on the C face of SiC strongly enhance the surface disorder and designate defect areas as preferential sublimation sites. Based on these features, we discuss differences and similarities between the C-only buffer layer that forms on the Si face of SiC and the thicker C-Si-O amorphous film of the C face.

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Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods

Abstract: 2 the growth conditions used in this study, 5 monolayer thick graphene does not form a continuous layer, so such thickness is not sufficient to completely cover the substrate.

Cited by 27 publications

References 50 publications

Growth morphology and properties of metals on graphene

Growth morphology and properties of metals on graphene

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Interface disorder probed at the atomic scale for graphene grown on the C face of SiC

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