2004
DOI: 10.1016/j.mseb.2004.07.037
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Exploring Ni–Si thin-film reactions by means of simultaneous synchrotron X-Ray diffraction and substrate curvature measurements

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Cited by 14 publications
(4 citation statements)
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“…By building up an interface atomic model on the length scale of typical core region dimensions (10 nm), we suggest that complex interface reconstructions, taking place on regions wider than the (1 Â 1) area, may lower the interface energy and allow the growth of unstrained cores, as those detected in the experiments. Recent papers (Liew et al, 2004;Gergaud et al, 2004) have measured the strain evolution during Ni/Si solid-state reactions where different silicide phases build up between the initial [unreacted Ni/Si(001)] and final [completely reacted NiSi/Si(001)] states. A stress/strain relationship derived from elasticity theory is used to obtain values of stress at each instant of time: until Ni consumption and/or NiSi formation, Ni 2 Si layers are found to grow under high compressive stress.…”
Section: Discussionmentioning
confidence: 99%
“…By building up an interface atomic model on the length scale of typical core region dimensions (10 nm), we suggest that complex interface reconstructions, taking place on regions wider than the (1 Â 1) area, may lower the interface energy and allow the growth of unstrained cores, as those detected in the experiments. Recent papers (Liew et al, 2004;Gergaud et al, 2004) have measured the strain evolution during Ni/Si solid-state reactions where different silicide phases build up between the initial [unreacted Ni/Si(001)] and final [completely reacted NiSi/Si(001)] states. A stress/strain relationship derived from elasticity theory is used to obtain values of stress at each instant of time: until Ni consumption and/or NiSi formation, Ni 2 Si layers are found to grow under high compressive stress.…”
Section: Discussionmentioning
confidence: 99%
“…Recently, using a synchrotron source, composition profiles in Mo/V multilayers have been investigated in situ during heat treatments [31]. Simultaneous diffraction and wafer curvature experiments have been reported [32] during the reaction of a Ni thin film with a Si substrate.…”
Section: Inhomogeneous Strainsmentioning
confidence: 99%
“…Figure 4 shows a 224 reciprocal space map measured on a Si (001) single crystal covered by an array of amorphous Si 3 N 4 lines [24] parallel to the [ ] Most of these x-ray scattering experiments are now available in-situ either during mechanical loading or thermal cycling. Simultaneous diffraction and wafer curvature experiments have been reported [27] during the reaction of a Ni thin film with a Si substrate. It allows for the observation of grain rotation and shows the activation of different slip systems within the same grain.…”
Section: Inhomogeneous Strainsmentioning
confidence: 99%