2018
DOI: 10.1103/physrevb.97.075438
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Exploring single-layered SnSe honeycomb polymorphs for optoelectronic and photovoltaic applications

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Cited by 49 publications
(24 citation statements)
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“…The parameters of structural optimizations are in accordance with the results in the previous work [26]. Additionally, a SnSe monolayer in β-phase is a semiconductor with a 1.974 eV band gap in the PBE method, which has a larger band gap than that of SnSe in α-phase (the band gap values of α-SnSe are 0.90 eV indirect and 1.30 eV direct) [15,26]. Judging from the result of the DFT calculation, the most stable sites of structural optimizations for gas molecules on the β-SnSe layer are presented in Figure 2.…”
Section: Resultssupporting
confidence: 85%
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“…The parameters of structural optimizations are in accordance with the results in the previous work [26]. Additionally, a SnSe monolayer in β-phase is a semiconductor with a 1.974 eV band gap in the PBE method, which has a larger band gap than that of SnSe in α-phase (the band gap values of α-SnSe are 0.90 eV indirect and 1.30 eV direct) [15,26]. Judging from the result of the DFT calculation, the most stable sites of structural optimizations for gas molecules on the β-SnSe layer are presented in Figure 2.…”
Section: Resultssupporting
confidence: 85%
“…Within 2D materials, monolayered graphene has been immensely researched due to its commendable properties [13]. However, the lack of an energy band gap limits its applications in the fields of field-effect transistors, gas sensors, and computer chips [14,15]. On the contrary, some 2D materials have a large band gap, but they are unstable in air, such as silicene [16] and phosphorenes [17], which hinders their commercial applications.…”
Section: Introductionmentioning
confidence: 99%
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“…It was also seen that the electronic band structure exhibits anisotropy behavior because the band dispersion profile is different along the high-symmetry point G-X and G-Y . This means that the possibility of the creation of electrons and holes depends on the band dispersion profile with the incident of electromagnetic radiation on a HG monolayer [64]. According to that, the excitation will appear at a different photon energy along the x and y directions (see Fig.…”
Section: B Optical Propertiesmentioning
confidence: 99%
“…Interest in graphene and other two-dimensional (2D) materials such as MoS 2 and black phosphorus (BP) has continuously increased since the first isolation of graphene in 2004 1 . Tin (II) selenide (SnSe), tin (II) sulfide (SnS) and their alloys are an interesting class of 2D materials for a variety of reasons: their band gap falls between 0.9 eV (SnSe) and 1.5 eV (SnS) 2 4 , an important range for photovoltaic and optoelectronic applications 5 13 ; due to the in-plane anisotropy of the crystal, the optical and electronic properties depend on the in-plane direction of a device; and unlike a similar material, black phosphorus, they are fairly stable in air 13 15 . Furthermore, a very high thermoelectric figure of merit (ZT) value of 2.6 was reported in bulk SnSe, which showed dependence on the crystallographic direction 16 .…”
Section: Introductionmentioning
confidence: 99%