Exploring Strategies to Contact 3D Nano-Pillars

Amat, E.; Moral, A. del; Fernández-Regúlez, Marta; Evangelio, Laura; Lorenzoni, Matteo; Gharbi, Ahmed; Rademaker, Guido; Pourteau, Marie-Line; Tiron, Raluca; Bausells, Joan; Pérez‐Murano, F.

doi:10.3390/nano10040716

Cited by 6 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While the filling factor remains large, contact resistance is large, possibly because of the improvable polymerization and polishing procedures. As an alternate strategy, Amat et al reported on the successful fabrication of metallic contacts on polymer-embedded NPs by using reactive-ion etching (RIE) to uncap NP tips [17]. Upon accurate optimization of RIE conditions (power, duration, and cycles), O 2 plasma enabled the selective removal of the polymer (a photolithographic resist) while preserving Si NPs.…”

Section: Discussionmentioning

confidence: 99%

“…As a second possibility, we embedded NP forests into a polymeric matrix, obtaining mechanically stabilized elements that could be used as conventional thermoelectric legs in TEGs and thermoelectric cool-ers (TECs). It should be mentioned that alternate approaches have been reported in the literature [17], which will be discussed and compared to electroplating and embedding.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication of Metal Contacts on Silicon Nanopillars: The Role of Surface Termination and Defectivity

Giulio,

Mazzacua,

Calciati

et al. 2024

Materials

View full text Add to dashboard Cite

The application of nanotechnology in developing novel thermoelectric materials has yielded remarkable advancements in material efficiency. In many instances, dimensional constraints have resulted in a beneficial decoupling of thermal conductivity and power factor, leading to large increases in the achievable thermoelectric figure of merit (ZT). For instance, the ZT of silicon increases by nearly two orders of magnitude when transitioning from bulk single crystals to nanowires. Metal-assisted chemical etching offers a viable, low-cost route for preparing silicon nanopillars for use in thermoelectric devices. The aim of this paper is to review strategies for obtaining high-density forests of Si nanopillars and achieving high-quality contacts on them. We will discuss how electroplating can be used for this aim. As an alternative, nanopillars can be embedded into appropriate electrical and thermal insulators, with contacts made by metal evaporation on uncapped nanopillar tips. In both cases, it will be shown how achieving control over surface termination and defectivity is of paramount importance, demonstrating how a judicious control of defectivity enhances contact quality.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of Metal Contacts on Silicon Nanopillars: The Role of Surface Termination and Defectivity

Giulio,

Mazzacua,

Calciati

et al. 2024

Materials

View full text Add to dashboard Cite

show abstract

“…In terms of dielectric characteristics, relative permeability (κ) values in the range of 2.8-5.1 have been reported [30]. The topography that arises due to the NPs precludes a good planarization; consequently, a method based on first producing a thicker HSQ layer and afterwards etching it back by means of diluted hydrofluoric acid (HF) is used [31,32]. The final HSQ thickness accuracy is determined by the precision of the etch-rate.…”

Section: Vertical Set Integration Processmentioning

confidence: 99%

CMOS compatible manufacturing of a hybrid SET-FET circuit

Moral

Amat²,

Engelmann³

et al. 2022

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

This study analyzes feasibility of CMOS-compatible manufacturing of a hybrid Single Electron Transistor – Field Effect Transistor (SET-FET) circuit. The fundamental element towards an operating SET at room temperature is a vertical nanopillar with embedded Si nanodot generated by ion-beam irradiation. The integration process from nanopillars to contacted SETs is validated by structural characterization. Then, the monolithic fabrication of planar FETs integrated with vertical SETs is presented, and its compatibility with standard CMOS technology is demonstrated. The work includes process optimization, pillar integrity validation, electrical characterization and simulations taking into account parasitic effects. The FET fabrication process is adapted to meet the requirements of the pre-fabricated nanopillars. Overall, this work establishes the groundwork for the realization of a hybrid SET-FET circuit operating at room temperature.

show abstract

“…Pillar fabrication has been demonstrated by combination of DSA with tone-inversion [ 126 , 127 ], by sequential infiltration synthesis in BCPs [ 128 , 129 ], and directly by pattern transfer of the BCP template [ 130 ]. As we approach the most extreme semiconductor nodes in terms of scaling, alternative architectures and devices such as vertical gate-all-around field-effect transistors (GAA FETs) or single-electron transistors (SETs) are entering into discussion [ 131 ], which could be potentially fabricated by DSA.…”

Section: Block Copolymers For the Fabrication Of Functional Devicementioning

confidence: 99%

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

et al. 2020

Self Cite

View full text Add to dashboard Cite

Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

show abstract

Exploring Strategies to Contact 3D Nano-Pillars

Cited by 6 publications

References 15 publications

Fabrication of Metal Contacts on Silicon Nanopillars: The Role of Surface Termination and Defectivity

Fabrication of Metal Contacts on Silicon Nanopillars: The Role of Surface Termination and Defectivity

CMOS compatible manufacturing of a hybrid SET-FET circuit

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Contact Info

Product

Resources

About