Exploring Surface and Tunneling Properties of Defect-Oriented Quasi-Graphene/Poly(vinylidene fluoride) Nanocomposite Films as Flexible 2D Materials for Electronic Applications

Abstract

Here, we demonstrate the promising tunneling property of electrons across quasi-graphene/poly(vinylidene fluoride) (PVDF) through the Coulomb blockade region. The melt-mixing technique is used to prepare such a nanocomposite by mixing a nanofiller into the polymer matrix. The structure and surface morphology are studied using X-ray diffraction and field-emission scanning electron microscopy measurements, which show defects oriented in the sample while the binding of matrix with the nanofiller remains highly conductive even upon its binding with the insulating matrix. Tunneling properties of quasi-graphene/PVDF are studied using scanning tunneling microscopy measurements, which indicate high resistance in the Coulomb blockade region. Potential aspects of quasi-graphene/PVDF as a flexible material for device applications are also discussed.

Grain-Boundary Effects on the Charge Transport Behavior of Quasi-2D Graphene/PVDF for Electrostatic Control of Power Dissipation in GFETs

“…37 The defects and disorders were measured at a higher level with an intensity ratio of 1.2 (I D /I G ) for the asprepared graphene nanocomposite. 17,34,35 Figure 2f shows the optical image of the graphene nanocomposite scanned using the Raman spectroscopy, which is in congruence with the fieldemission scanning electron microscopy image of the graphenebased nanocomposite. 17 The chemical composition of carbon and fluorine present in the graphene-based nanocomposite is confirmed using the energy-dispersive X-ray spectroscopy measurements.…”

“…17,34,35 Figure 2f shows the optical image of the graphene nanocomposite scanned using the Raman spectroscopy, which is in congruence with the fieldemission scanning electron microscopy image of the graphenebased nanocomposite. 17 The chemical composition of carbon and fluorine present in the graphene-based nanocomposite is confirmed using the energy-dispersive X-ray spectroscopy measurements. 17 AFM topography reveals the defects present in the quasi-2D graphene-based nanocomposite scanned in the 1 μm range, as shown in Figure 2g, having an average roughness of 35 nm.…”

“…17 The chemical composition of carbon and fluorine present in the graphene-based nanocomposite is confirmed using the energy-dispersive X-ray spectroscopy measurements. 17 AFM topography reveals the defects present in the quasi-2D graphene-based nanocomposite scanned in the 1 μm range, as shown in Figure 2g, having an average roughness of 35 nm. The UV-DRS spectrum shows a red shift, which occurred due to the electronic configuration of graphene showing the C−C bonding, i.e., π−π* interaction at 235 nm as highlighted in the The Raman image of the graphene-based nanocomposite shows the boundaries of the grains, as evident from Figure 2f.…”

“…This implies good conduction through the nanocomposite indicating its potential for quantum tunneling to occur. 17 In addition, the Coulomb blockade region spanning −0.2 to 0.2 V allows for higher resistance with 1.5 nF capacitance at 1 Hz. This supersedes our previous results 17 and is due to the grain-boundary formation in the sample in the highertemperature regime, yielding a high resistance.…”

“…Graphene can also be tailored with the addition of nanofillers or polymers to augment the device characteristics. 17 As charge carriers start dissipating energy within the lattice, variation in the temperature of semiconductor devices often alters the physical properties while conducting electrical operations, leading to phenomena such as Joule and Peltier effects. 18 The device lifetime 19 and carrier mobility 20 are thus reduced impacting the overall performance of the electronic devices with the increase in temperature.…”